Ytterbium-doped sodium/potassium bismuth tetramolybdate tungstate laser crystal and its growth method and application

A technology of bismuth sodium molybdenum tungstate and laser crystal, which is applied in crystal growth, single crystal growth, single crystal growth, etc., to achieve good comprehensive physical and chemical properties and wide emission bandwidth.

Inactive Publication Date: 2012-02-15
JINAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, doped Yb 3+ The structural design, growth technology and performance research of ion composite molybdenum bismuth tungstate sodium (or potassium) laser crystals have not been reported yet.

Method used

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  • Ytterbium-doped sodium/potassium bismuth tetramolybdate tungstate laser crystal and its growth method and application
  • Ytterbium-doped sodium/potassium bismuth tetramolybdate tungstate laser crystal and its growth method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The value of x is 5%, the value of y is 0.46, and the batching is carried out according to the following reaction formula:

[0032] 5Na 2 CO 3 +0.95Bi 2 o 3 +0.05Yb 2 o 3 +0.92WO 3 +7.08MoO 3

[0033] =2Yb 0.05 :Na 5 Bi 0.95 (WO 4 ) 0.46 (MoO 4 ) 3.54 +5CO 2 ↑

[0034] The polycrystalline material is synthesized in solid phase by molten salt method. Raw material: anhydrous Na 2 CO 3 (analytically pure, the purity is more than 99.99%), Bi 2 o 3 (analytically pure, the purity is more than 99.99%), WO 3 (Analytical pure, the purity is above 99.99%), MO 3 (analytically pure, the purity is more than 99.99%), Yb 2 o 3 (Analytical pure, the purity is more than 99.99%); Experimental instruments used: electronic balance (JA3103N type 0.1mg), powder tablet press (769YP-24B type), muffle furnace, temperature controller (AI-808P type), melting Salt extraction growth furnace, platinum crucible.

[0035] Raw material Na 2 CO 3 、 Bi 2 o 3 、WO 3 and Yb 2...

Embodiment 2

[0037] The value of x is 10%, the value of y is 2, and the batching is carried out according to the following reaction formula:

[0038] 5Na 2 CO 3 +0.9Bi 2 o 3 +0.1Yb 2 o 3 +4WO 3 +4MoO 3

[0039] =2Yb 0.1 :Na 5 Bi 0.9 (WO 4 ) 2 (MoO 4 ) 2 +5CO 2 ↑

[0040] The crystalline material is compounded and polycrystalline material is synthesized according to the raw materials and equipment in Implementation 1. Raw material Na 2 CO 3 、 Bi 2 o 3 、WO 3 and Yb 2 o 3 Strictly weigh with electronic balance according to stoichiometric ratio, MoO 3 Weigh 102% based on the standard weighing mass. where Yb 3+ Doped at 10 atomic percent. After weighing, put all the raw materials in a corundum mortar, grind and mix them evenly, press them into flakes with a hydraulic press at a pressure of 3.0 tons per square centimeter, put them into a Φ50mm×50mm platinum crucible, and place the platinum crucible in a muffle furnace After sintering at 950°C for 20 hours for solid-st...

Embodiment 3

[0042] The value of x is 10%, the value of y is 2, and the batching is carried out according to the following reaction formula:

[0043] 5K 2 CO 3 +0.9Bi 2 o 3 +0.1Yb 2 o 3 +4WO 3 +4MoO 3

[0044] =2Yb 0.1 :K 5 Bi 0.9 (WO 4 ) 2 (MoO 4 ) 2 +5CO 2 ↑

[0045]The crystalline material carries out batching and the synthesis of polycrystalline material according to the raw material and equipment in implementing 1, wherein K 2 CO 3 (analytically pure, with a purity of more than 99.99%) to replace Na 2 CO 3 . Raw material K 2 CO 3 、 Bi 2 o 3 、WO 3 and Yb 2 o 3 Strictly weigh with electronic balance according to stoichiometric ratio, MoO 3 Weigh 102% based on the standard weighing mass. where Yb 3+ Doped at 10 atomic percent. After weighing, put all the raw materials in a corundum mortar, grind and mix them evenly, press them into flakes with a hydraulic press at a pressure of 3.0 tons per square centimeter, put them into a Φ50mm×50mm platinum crucible, an...

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Abstract

The invention discloses a bismuth sodium / potassium laser crystal doped with ytterbium tetramolybdenum tungstate and a growth method thereof. The chemical formula of the laser crystal is Ybx: A5Bi1-x(WO4)y(MoO4)4-y. When A is potassium ion, the crystal structure belongs to the trigonal crystal system, and the space group is R <overscore> 3< / overscore> m; when A is a sodium ion, the crystal structure belongs to the tetragonal crystal system, and the space group is I41 / a;; x is the fraction of doped atoms, and the value range is 5% to 20%; the value range of y is 0<y≤2 . The laser crystal is prepared by the molten salt method and the pulling method. The chemical raw materials are strictly weighed, and all the chemical raw materials are mixed, ground, and pressed into tablets; , rotation rate and isometric growth process to obtain laser crystals. The crystal can be used as a new femtosecond laser gain medium crystal material, especially a new femtosecond laser working substance. The crystal can be directly pumped using flash lamps and LDs.

Description

technical field [0001] The invention relates to a laser crystal, in particular to a bismuth sodium / potassium crystal doped with ytterbium tetramolybdenum tungstate, and also relates to a growth method of the crystal, which belongs to the field of artificial crystal and crystal growth. Background technique [0002] In the research of laser materials, tunable and ultrashort pulse microchip laser materials are one of the key research contents in the laser field. The highly compact microchip laser is easy to realize high-efficiency laser output and TEM due to its short cavity length, small influence of thermal distortion, and 00 It has been widely used in many fields. However, the limited thickness of microchip laser media, the concentration quenching of activated ions, and the high quality requirements of grown crystals are the bottlenecks in the development of tunable and ultrashort pulse microchip laser materials. Therefore, choosing suitable active ions and exploring excel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/32C30B15/00
Inventor 陈振强韩永飞李景照李安明付乔克朱思祁
Owner JINAN UNIVERSITY
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