Alkali soluble light-sensitive organosilicon preformed polymer and preparation method thereof

A silicone, alkali-soluble technology, applied in the field of alkali-soluble photosensitive silicone prepolymer

Inactive Publication Date: 2009-03-25
BEIJING UNIV OF CHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The technical problem to be solved by the present invention is to prepare a photosensitive organosilicon prepolymer that can be developed with a dilute alkali aqueous solution, and improve the high temperature resistance and flexibility of the prepolymer by inserting organosilicon segments; Problems such as environmental pollution caused by organic developer, to meet the needs of production and life

Method used

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  • Alkali soluble light-sensitive organosilicon preformed polymer and preparation method thereof
  • Alkali soluble light-sensitive organosilicon preformed polymer and preparation method thereof
  • Alkali soluble light-sensitive organosilicon preformed polymer and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0104] In a 100ml three-necked flask equipped with a stirrer, a dropping funnel, and a condenser, add 2.10g AG-80, dissolve it in 6.0g DMF, add 0.1g polymerization inhibitor p-methoxyphenol, and heat to 90°C to Removal of peroxides from epoxies. Then the mixture of 1.44 g of acrylic acid containing 0.1 g of catalyst p-toluenesulfonic acid was slowly added dropwise, and the dropwise addition was completed within about 0.5 h. Measure the acid value of the system, stop heating and cool down when the acid value remains unchanged.

[0105] 18.25g Q4-3667, 8.88g isophorone diisocyanate (IPDI), 3.00g dimethylol propionic acid (DMPA), 0.2g inhibitor p-methoxyphenol, 0.6g catalyst dibutyl dilaurel Add tin (DBTDL) into the three-necked flask and react at 50°C. Measure the content of isocyanate by the di-n-butylamine-acetone method, monitor the progress of the reaction, and add the product of the first step to react to the isocyanate when the reaction reaches half. The value dropped to...

Embodiment 2～5

[0112] Repeat the steps of Example 1, the difference lies in the raw materials used and their consumption, as shown in Table 1.

[0113] Table 1

[0114] Example 1 Example 2 Example 3 Example 4 Example 5 AG-80 2.10 2.10 2.10 2.10 2.10 acrylic acid 1.44 1.80 2.10 1.44 1.44 p-methoxyphenol 0.3 0.3 0.3 0.3 0.3 p-Toluenesulfonic acid 0.1 0.1 0.1 0.1 0.1 Q4-3667 18.25 18.25 18.25 18.25 18.25 IPDI 8.88 8.88 8.88 8.88 8.88 DMPA 3.00 3.00 3.00 3.90 4.50 DBTDL 0.6 0.6 0.6 0.6 0.6

Embodiment 6

[0116] The purpose of this example is to illustrate that the alkali-soluble photosensitive silicone prepolymer prepared in Example 1 can be used to prepare solder resist ink, and its performance is measured.

[0117] Weigh 1.5 g of the alkali-soluble photosensitive silicone prepolymer in Example 1 and dissolve it in 5 g of β-hydroxyethyl acrylate (HEA), add 0.2 g of photosensitizer 2-hydroxyl-methylphenylpropane-1-one After (1173), the mixture is coated on a glass plate to obtain a thin film with a thickness of about 25 μm. Put a mask plate with a simple pattern on it, put it on a UV curing machine for exposure, make it photochemically react, and then immerse it in 1% sodium carbonate aqueous solution for 60s at room temperature to make it develop. Then bake it in a constant temperature drying oven at 100°C to a constant weight, measure the residual film rate from the film mass ratio before and after development, and measure the exposure amount required for the residual film r...

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Abstract

The invention discloses an alkaline-solubility photosensitive organic silicon prepolymer and a preparation method thereof. The preparation method includes the following steps: (1) epoxide, a polymerization inhibitor 1, a catalyzer 1 and an olefinic monomer which can react with a epoxide group are added into a first reactor and react at 80 DEG C to 100 DEG C for 5 hours to 7 hours; (2) organic silicon, polybasic isocyanate, carboxylic acid or acid anhydride containing an active group, a polymerization inhibitor 2 and a catalyzer 2 are added into a second reactor at 50 DEG C to 80 DEG C for 5 hours to 8 hours, and then products obtained in the step (1) are added into the second reactor for reaction till termination; and (3) temperature is reduced to the room temperature and then materials are discharged and stored and reserved away from light. The organic silicon prepolymer of the invention has the advantages that: (1) the synthesized photosensitive organic silicon prepolymer has comparatively good resistance to high temperature as well as good light sensitivity and flexibility; (2) solder mask ink prepared by the prepolymer is developed by weak alkali liquor so as to avoid environmental pollution caused by mass use of organic solvents; and (3) the invention has simple synthetic method, easy operation and low-cost and easily available materials.

Description

technical field [0001] The invention prepares an alkali-soluble photosensitive organosilicon prepolymer and measures its performance. It belongs to the field of fine chemical technology. Background technique [0002] Solder resist ink is one of the key materials for making printed circuit boards (Printed Circuit Board, PCB). It is coated on etched circuit boards and cured to form excellent protection such as insulation, heat resistance, and adhesion. Membrane to prevent line disconnection. In the immersion tin process, the tinned area can be controlled to prevent short circuits caused by dense solder joints. The alignment accuracy and resolution of traditional screen printing solder resist ink are poor. The adhesion between dry film type solder resist ink and circuit board is not good. Since the concept of alkali developing photosensitive solder resist ink was proposed in the late 1980s, some foreign companies have carried out many related development researches. [0003...

Claims

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Application Information

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IPC IPC(8): C08G77/388C09D11/10G03F7/027C09D11/101C09D11/107
Inventor 孙芳张璐杜洪光
Owner BEIJING UNIV OF CHEM TECH
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