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Method for preparing inorganic thin-film transistor by complete solution treatment process

An inorganic thin film and triode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as good TFT performance, and achieve the effects of reducing production costs, simple process, and speeding up production.

Inactive Publication Date: 2009-03-18
SHANGHAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The high temperature process can only use expensive quartz as the substrate, and the TFT has good performance. The high temperature process is only suitable for small and medium-sized display screens or projection screen series

Method used

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  • Method for preparing inorganic thin-film transistor by complete solution treatment process
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  • Method for preparing inorganic thin-film transistor by complete solution treatment process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Embodiment 1: the preparation of a thin film triode with a bottom gate structure using ITO as the gate (gate), see figure 1 :

[0017] 1. TiO 2 Solution preparation: ①Use a pipette to measure 400ul of hydrochloric acid and dissolve in 200ml of ethanol; ②Add 55ml of tetrabutyl titanate and 200ml of ethanol to dissolve; ③Continue to add 5ml of acetylacetone and 11ml of deionized water. The above solutions are uniformly stirred while adding, the solvent is added completely, and the stirring is finished. TiO with a concentration of 0.33 was obtained 2 solution.

[0018] 2. Preparation of ZnO solution: ①Weigh 0.628g of Zn(CH 3 COO) 2· 2H 2 O was dissolved in 250ml of ethanol, heated to reflux with an electric furnace until boiling. After 30 minutes, when the solution does not boil, transfer it into the Erlenmeyer flask; ② Add a certain amount of LiOH.H 2 O solid, shaken in an ultrasonic bath for 20 minutes to produce a colloid. A ZnO solution with a concentration of...

Embodiment 2

[0021] Embodiment two: use ITO as the preparation of the thin-film transistor of the bottom gate structure of gate (gate), see figure 2 , the specific steps are:

[0022] 1. TiO 2 Solution preparation: ①Use a pipette to measure 400ul of hydrochloric acid and dissolve in 200ml of ethanol; ②Add 27.5ml of tetrabutyl titanate and 200ml of ethanol to dissolve; ③Continue to add 5ml of acetylacetone and 11ml of deionized water. The above solutions are uniformly stirred while adding, the solvent is added completely, and the stirring is finished. TiO with a concentration of 0.165mol / L was obtained 2 solution.

[0023] 2. Preparation of ZnO solution: ①Weigh 0.319g of Zn(CH 3 COO) 2· 2H 2 O was dissolved in 250ml of ethanol, heated to reflux with an electric furnace until boiling. After 30 minutes, the solution was cooled to room temperature and transferred into the Erlenmeyer flask; ② At the same time, a certain amount of LiOH.H 2 O was added to another Erlenmeyer flask, then p...

Embodiment 3

[0025] Example 3: Preparation of top gate structure thin film triode, see image 3 , the specific steps are:

[0026] 1. TiO 2 Solution preparation: ①Use a pipette to measure 400ul of hydrochloric acid and dissolve in 200ml of ethanol; ②Add 18.3ml of tetrabutyl titanate and 200ml of ethanol to dissolve; ③Continue to add 5ml of acetylacetone and 11ml of deionized water. The above solutions are uniformly stirred while adding, the solvent is added completely, and the stirring is finished. A TiO2 solution with a concentration of 0.11 mol / L was obtained.

[0027] 2. Preparation of ZnO solution: ①Weigh 0.511g of Zn(CH 3 COO) 2· 2H 2 O is dissolved in sufficient isopropanol. ② Add ethanolamine which is equimolar to zinc acetate, and under the action of catalyst glacial acetic acid, fully stir in a water bath at 60°C to obtain a colloid. A ZnO solution with a concentration of 0.04mol / L was obtained.

[0028] 3. Use ITO as the source and drain, and metal as the gate. Its channel...

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Abstract

The invention relates to a process for preparing an inorganic film triode TFT by the all solution processing method, which adopts the all solution processing method to prepare the insulating layer TiO2 and the active layer ZnO of the triode, and specifically comprises the following steps: firstly preparing TiO2 and ZnO into solution with 0.05ml-0.1ml concentration through adopting the hydrothermal method and the sol-gel process, and coating the ZnO and TiO2 obtained in the first step on a substrate electrode through the spin-coating method, Czochralski method or the titration covering method to form a ZnO and TiO2 film which can form the micro-crystallization through the high-temperature annealing or the laser annealing technology. The invention can prepare the TiO2 film and the ZnO film with temperature lower than 500 DEG C, has relatively simple technology, is beneficial for reducing device cost and accelerating preparation speed, and is beneficial for the industrialization, can prepare on cheap materials such as glass and the like, and is compatible with elastic and plastic materials technology. TFT components with high dielectric constant insulating layer and super-high charge mobility active layer can be obtained, which have milliamp level heavy current density and current switch ratio as high as hundreds of thousand, and can drive low-voltage OLED.

Description

technical field [0001] The invention relates to a preparation method of an inorganic thin film triode TFT, in particular to a method for preparing an inorganic thin film triode TFT by a full solution processing method. Background technique [0002] Since the invention of thin film transistors in the 1960s, they have been widely promoted and applied, and the speed of development is beyond imagination. From amorphous silicon TFTs to polysilicon TFTs, from high-temperature polysilicon TFTs to low-temperature polysilicon TFTs, the technology is becoming more and more mature, and the application objects have evolved from just driving LCDs to driving both LCDs and OLEDs, and even electronic paper. TFTs can be classified into amorphous silicon thin films, polysilicon thin films (poly-Si), and organic thin film TFTs. Usually TiO 2 Make an insulating layer therein. As chip manufacturers install more and more transistors on tiny silicon wafers, in the process of scaling down semico...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/335H01L21/336H01L21/368
Inventor 魏斌李博孙三春张建华汪敏
Owner SHANGHAI UNIV
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