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Low dielectric coefficient polyimide/oligomeric silsesquioxane nano hybrid film and preparation thereof

A technology of polysilsesquioxane and low dielectric constant, which is applied in the field of polymer dielectric materials, can solve problems such as thermal/chemical stability and dielectric performance conflicts, and achieve improved compatibility, excellent comprehensive performance, Effect of low dielectric constant

Inactive Publication Date: 2009-02-25
TORAY FIBER RES INST(CHINA) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The purpose of this invention is to provide a kind of low dielectric constant polyimide / oligomeric silsesquioxane nano-hybrid film, thereby solve existing low dielectric constant polyimide material heat / chemical stability and dielectric The problem of conflicting performance

Method used

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  • Low dielectric coefficient polyimide/oligomeric silsesquioxane nano hybrid film and preparation thereof
  • Low dielectric coefficient polyimide/oligomeric silsesquioxane nano hybrid film and preparation thereof
  • Low dielectric coefficient polyimide/oligomeric silsesquioxane nano hybrid film and preparation thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Dissolve 1.3g of octaaminophenyl silsesquioxane (referred to as OAPS) in 15ml of N-methylpyrrolidone (referred to as NMP), after fully dissolving, slowly drop into 10ml containing 3,3',4,4'- NMP solution of 2.9 g of benzophenone tetraacid dianhydride (BTDA); after the dropwise addition, react at 30°C for 1 hour under nitrogen atmosphere to obtain silsesquioxane with acid anhydride functional groups;

[0043] Dissolve 2.0g 4,4'-diaminodiphenyl ether (ODA) monomer in 30ml of NMP, after fully dissolving, add 1.0ml of the above-mentioned silsesquioxane solution with acid anhydride functional group dropwise; then add BTDA 3.1g, the feeding time was controlled at 60 minutes, after the feeding was completed, the reaction was carried out at 20°C for 20 hours under a nitrogen atmosphere to obtain a uniform polyamic acid solution with a solid content of 0.18g / ml;

[0044] The above polyamic acid solution was formed into a film on a glass plate, and the imidization treatment was c...

Embodiment 2

[0046] Dissolve 1.3g of octaaminophenyl silsesquioxane (referred to as OAPS) in 15ml of N,N-dimethylacetamide (referred to as DMAc), after fully dissolving, slowly drop into 10ml containing 3,3',4 , a DMAc solution of 2.9 g of 4'-benzophenone tetracarboxylic dianhydride (BTDA); after the dropwise addition, the reaction was carried out at 20°C for 1.5 hours under a nitrogen atmosphere to obtain a silsesquioxane with acid anhydride functional groups;

[0047] Dissolve 2.0g of 4,4'-diaminodiphenyl ether (ODA) monomer in 30ml of DMAc, after fully dissolving, add 5.2ml of the above-mentioned silsesquioxane solution with acid anhydride functional group dropwise; then add BTDA2.6g, the feeding time was controlled at 50 minutes, after the feeding was completed, the reaction was carried out at 15°C for 24 hours under a nitrogen atmosphere to obtain a uniform polyamic acid solution with a solid content of 0.18g / ml;

[0048] The above polyamic acid solution was formed into a film on a gl...

Embodiment 3

[0050] Dissolve 1.3g of octaaminophenyl silsesquioxane (referred to as OAPS) in 15ml of N,N-dimethylacetamide (referred to as DMAc), after fully dissolving, slowly drop into 10ml containing 3,3',4 , a DMAc solution of 2.9 g of 4'-benzophenone tetraacid dianhydride (BTDA); after the dropwise addition, the reaction was carried out at 15°C for 2.5 hours under a nitrogen atmosphere to obtain a silsesquioxane with an acid anhydride functional group;

[0051] Dissolve 2.0g 4,4'-diaminodiphenyl ether (ODA) monomer in 30ml of DMAc, after fully dissolving, add 15.7ml of the above silsesquioxane solution with acid anhydride functional group dropwise; then add BTDA 1.47g, the feeding time was controlled at 30 minutes, and after the feeding was completed, the reaction was carried out at 25° C. for 16 hours under a nitrogen atmosphere to obtain a uniform polyamic acid solution with a solid content of 0.20 g / ml;

[0052] The above polyamic acid solution was formed into a film on a glass pla...

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Abstract

The invention discloses a polyimide / oligomeric silsesquioxane nano-hybrid film with low dielectric constant, which consists of diacid anhydride monomers, diamine monomers and oligomeric silsesquioxane, wherein, the mass content of the oligomeric silsesquioxane is 0.1%-30%, and the mol ratio of the diamine monomers to the diacid anhydride monomers is 1:1-1.1. The polyimide / oligomeric silsesquioxane nano-hybrid film has the advantages of low dielectric constant and maintaining the original excellent properties of the polyimide matrix resin. The preparation method of the invention can obviously improve the miscibility among the oligomeric silsesquioxane, the reactant and the polymer matrix, which causes the oligomeric silsesquioxane to be easily and evenly dispersed in the polyimide resin by nano size to obtain organic-inorganic hybrid materials with excellent comprehensive properties; and the polyimide / oligomeric silsesquioxane nano-hybrid film has wide application prospect in the aspects of electrical engineering, electron, information, military, aeronautics, astronautics, etc.

Description

technical field [0001] The invention belongs to the field of polymer dielectric materials, in particular to a film made of a low dielectric constant polyimide / oligomeric silsesquioxane nano hybrid polymer and a preparation method thereof. Background technique [0002] The development of the modern microelectronics industry places higher and higher performance requirements on the materials used. As an organic polymer material with excellent comprehensive properties, polyimide (PI) is widely used in the microelectronics industry for passivation and packaging materials on chip surfaces, interlayer insulating materials for multi-layer wiring, and flexible printed circuits. Board base material, etc. However, with the gradual shrinking of the size of the VLSI, the resistance and capacitance (Rc) delay of the metal interconnection increases approximately quadratically, resulting in signal transmission delay and crosstalk, which directly affects the performance of the device. In o...

Claims

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Application Information

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IPC IPC(8): C08J5/18C08J7/12C08L79/08C08L83/04
Inventor 陈桥杨扬吴刚
Owner TORAY FIBER RES INST(CHINA) CO LTD
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