Method of fabrication of a finfet element

Abstract

The present disclosure provides a method of fabricating a Fin FET element including providing a substrate including a first fin and a second fin. A first layer is formed on the first fin. The first layer comprises a dopant of a first type. A dopant of a second type is provided to the second fin. High temperature processing of the substrate is performed on the substrate including the formed first layer and the dopant of the second type. The invention provides unniform doping profile and does not generate shadow shielding effect, and satisfies performance requirement of the Fin FET element.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a method of manufacturing a fin field effect transistor device. Background technique [0002] A double-gate metal oxide semiconductor field effect transistor (double-gate MOSFET) is a metal oxide semiconductor field effect transistor that combines two gate structures into a single device. The device is also known as a Fin Field Effect Transistor (FinFET) because its structure includes "fins" extending from the substrate. FinFETs can be manufactured using the technology of general metal-oxide-semiconductor field-effect transistors. A typical FinFET is fabricated on a silicon layer with an insulating layer covering it, and the above-mentioned device will extend out of the insulating layer, like a fin of the silicon layer. Channels for field effect transistors are formed in the vertical fins. And the double gate structure is formed on the fin. T...

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Problems solved by technology

However, the ion implantation process can result in a fin with a non-conformal doping profile (eg, doping at the top of the fin is greater than at the bottom of the fin near the substrate)

This non-uniform doping profile can cause problems including short channel effects

The use of tilt implant technology (tilt implant) can improve the problem of non-uniform doping distribution, but the disadvantage is that it will cause shadowing effect (shadowing effect)

However, because the ion energy of the immersion plasma ion implantation technology is too low, it cannot meet the performance requirements of the FinFET device.

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