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Compound film hetero-junction having magnetoelectric effect and preparing method thereof

A composite film, magnetoelectric effect technology, applied in the fields of dielectric physics and magnetic physics, can solve the problems of weak magnetoelectric effect of composite film, limited stress transfer process, weak magnetostrictive performance, etc., to avoid stress constraints. , the effect of effective interface stress transfer and effective magnetoelectric coupling

Inactive Publication Date: 2008-10-15
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although these composite films exhibit magnetoelectric coupling effects, there are still some obvious deficiencies, such as: (1) Due to the stress constraints of the hard ceramic and silicon-based substrates on the composite films, the interaction between the two phases in the composite film is greatly limited. During the stress transfer process, the magnetoelectric effect is generally weak; (2) The magnetostrictive properties of the ferrite material with spinel structure are generally weak, resulting in the magnetoelectric effect of the composite film is not strong

Method used

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  • Compound film hetero-junction having magnetoelectric effect and preparing method thereof
  • Compound film hetero-junction having magnetoelectric effect and preparing method thereof
  • Compound film hetero-junction having magnetoelectric effect and preparing method thereof

Examples

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Embodiment 1

[0068] Example 1: SmFe 2 / PVDF nanocomposite film heterojunction. refer to figure 1 , SmFe 2 / PVDF nanocomposite film heterojunction consists of a polarized PVDF piezoelectric film layer 1 and SmFe with negative magnetostrictive effect 2 The nano film layer 2 is composed of a flat aluminum (Al) electrode 3 for output voltage on the lower surface of the PVDF piezoelectric film layer 1, and the SmFe 2 The upper surface of the nano film layer 2 has a flat platinum (Pt) electrode 4 for output voltage. Among them, the thickness of PVDF piezoelectric film is 20μm, SmFe 2 The thickness of the nano film layer is 200nm.

[0069] Preparation of the above SmFe 2 / PVDF nanocomposite film heterojunction method is as follows:

[0070] (1). Select SmFe 2 Alloy sheet as sputtering target;

[0071] (2). Coating an aluminum electrode on the bottom surface of the piezoelectric film of PVDF through polarization treatment;

[0072] (3). Make the vacuum degree of the sample deposition cham...

Embodiment 2

[0078] Example 2: TbFe 2 / PVDF nanocomposite film heterojunction

[0079] The TbFe of this embodiment 2 The structure of the / PVDF nano-film heterojunction is similar to that of the nanocomposite film heterojunction in Example 1, consisting of a PVDF piezoelectric film layer with a thickness of 20 μm and a TbFe film with a magnetostrictive effect. 2 Nano film layer structure, wherein, the lower surface of the PVDF piezoelectric film layer has a planar Al electrode for output voltage, and the TbFe 2 The upper surface of the nano film layer has a layer of planar Pt electrodes for output voltage. The basic difference between the nanocomposite film heterojunction in this embodiment and the nanocomposite film heterojunction in Example 1 is that the rare earth iron alloy material used in this example is TbFe with positive magnetostrictive effect 2 Material, TbFe 2 The thickness of the nano film layer is 390nm.

[0080] The TbFe of this embodiment 2 The preparation method of th...

Embodiment 3

[0085] Example 3: Tb 0.7 Dy 0.3 Fe 2 / PVDF nanocomposite film heterojunction (the Tb 0.7 Dy 0.3 Fe 2 It is a commercial rare earth ferroalloy magnetostrictive material, the trade name is: Terfenol-D).

[0086] Tb of this embodiment 0.7 Dy 0.3 Fe 2 The structure of the / PVDF nano-film heterojunction is similar to that of the nanocomposite film heterojunction in Example 1, consisting of a PVDF piezoelectric film layer with a thickness of 20 μm and a Tb with magnetostrictive effect after polarization treatment. 0.7 Dy 0.3 Fe 2 Nano-film layer structure, wherein, the lower surface of the PVDF piezoelectric film layer has a planar Al electrode for output voltage, and the Tb 0.7 Dy 0.3 Fe 2 The upper surface of the nano film layer has a layer of planar Pt electrodes for output voltage. The basic difference between the nanocomposite film heterojunction in this embodiment and the nanocomposite film heterojunction in Example 1 is that the rare earth iron alloy material use...

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Abstract

The invention relates to a composite film heterojunction with magnetoelectric effect, which is formed by the compound of material with piezoelectric effect and material with magnetostrictive effect and characterized in that: the material with the magnetostrictive effect is a rare earth ferroalloy RFe2 nano film, wherein, R is a rare earth element; the material with the piezoelectric effect is a soft PVDF polymer piezoelectric film; the compound mode of the two films is that: the rare earth ferroalloy RFe2 nano film is deposited on the PVDF piezoelectric film to form a RFe2 / PVDF double-layer nano composite film. The preparation method of the RFe2 / PVDF double-layer nano composite film comprises the steps that: RFe2 / PVDF nano-cluster beam current is continuously deposited on the surface of the PVDF piezoelectric film to form a RFe2 nano film layer. In the invention, the PVDF polymer film is a piezoelectric functional layer as well as the underlay of the RFe2 nano film layer. In the composite film heterojunction of the invention, interface stress transfer is more effective, thus having stronger magnetoelectric effect.

Description

technical field [0001] The invention belongs to the fields of dielectric physics and magnetic physics, and relates to a composite thin film heterojunction with magnetoelectric effect and a preparation method thereof. Specifically, it relates to a composite film heterojunction with magnetoelectric coupling effect composed of a rare earth iron alloy magnetostrictive nano film and a polyvinylidene fluoride (PVDF) polymer piezoelectric film. Background technique [0002] The magnetoelectric effect is a phenomenon in which materials undergo dielectric polarization under the action of an external magnetic field or magnetization under the action of an external electric field. In the field of magnetoelectric materials research, it is known that composite materials have a much higher magnetoelectric effect than single-phase compounds, so they are more practical and have broad application prospects in a new generation of high-performance electro-magnetic functional devices. It is use...

Claims

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Application Information

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IPC IPC(8): H01L43/10H01L43/12H01L41/16H01L41/18H01L41/22H01L41/37
Inventor 赵世峰万建国刘俊明韩民王广厚
Owner NANJING UNIV
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