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Abrasive grain CeO2 for chemical and mechanical buffing and method for preparing same

A chemical-mechanical and polishing technology, applied in polishing compositions containing abrasives, fibrous fillers, semiconductor/solid-state device manufacturing, etc., can solve the problems of poor monodispersity, unstable performance, uneven particle size distribution, etc. To achieve the effect of good dispersion, uniform particle size distribution and perfect structure

Active Publication Date: 2008-10-15
GRIREM ADVANCED MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the current CeO 2 There are many reports on the preparation of CeO, but there are widespread problems such as serious particle agglomeration, uneven particle size distribution, poor monodispersity, and unstable performance, which affect the quality of CeO. 2 Abrasive performance

Method used

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  • Abrasive grain CeO2 for chemical and mechanical buffing and method for preparing same
  • Abrasive grain CeO2 for chemical and mechanical buffing and method for preparing same
  • Abrasive grain CeO2 for chemical and mechanical buffing and method for preparing same

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0028] Example 1: Dissolving solid trivalent cerium salt in water to form 0.1mol L -1 solution, add dimethyl oxalate to this solution to form Ce 3+ : Dimethyl oxalate=1:8 clear mother liquor. Put it into a constant temperature water bath at 30° C. and stir continuously for several hours (testing with oxalic acid found that the reaction was not complete). The precipitate was separated by centrifugation, washed with deionized water and then with ethanol. The precipitate was dried at room temperature to obtain amorphous Ce 2 (C 2 o 4 ) 3 10H 2 O white precursor powder, the morphology of the powder was observed by TEM, and the phase structure was confirmed by XRD.

[0029] from figure 1 It can be seen from the image of the transmission electron microscope that: at low temperature, the precursor powder prepared without adding surfactant is an amorphous sample with uneven size, and the size is on the micron scale;

example 2

[0030] Example 2: Dissolving solid trivalent cerium salt in water to form 0.1mol L -1 solution, add dimethyl oxalate to this solution to form Ce 3+ : dimethyl oxalate=1:5 clarified mother liquor, in this mother liquor, add the non-ionic surfactant polyethylene glycol 20000 (PEG20000) that is 1.0% by weight. Put the mixed solution in an ultrasonic machine for ultrasonic treatment for 15 minutes, and then put it into a constant temperature water bath at 30° C. and stir continuously for several hours (the reaction was found to be complete by testing with oxalic acid). The precipitate was separated by centrifugation, washed with deionized water and then with ethanol. The precipitate is dried at room temperature to obtain spherical Ce 2 (C 2 o 4 )3 10H 2 O white precursor powder, TEM observed the powder morphology, and XRD confirmed its crystallization degree; put the precursor powder in a muffle furnace and calcined at 400°C to obtain the abrasive CeO 2 Powder, its morpholog...

example 3

[0033] Example 3: Dissolving cerium salt in water to make 0.2mol L -1 solution, add dimethyl oxalate to this solution to form Ce 3+ : Dimethyl oxalate=1: 6 clarification mother liquor, add the surfactant polyvinyl alcohol (PVA-124) that is 0.8% by weight in this mother liquor. Put the mixed solution in an ultrasonic machine for ultrasonic treatment for 10 minutes, and then put it into a constant temperature water bath at 30° C. and stir continuously for several hours (the reaction was found to be complete by testing with oxalic acid). The precipitate was separated by centrifugation, washed with deionized water and then with ethanol. The precipitate is dried at room temperature to obtain spherical Ce 2 (C 2 o 4 ) 3 10H 2 O white precursor powder, after calcination to obtain abrasive CeO 2 The powder has an average particle size of 87.53nm and a dispersion of 0.90.

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Abstract

The invention relates to a chemical mechanical polishing abrasive particle CeO2 and a method for preparing the same, belonging to the rare earth powder material chemical preparation technical field. The invention is to prepare the CMP abrasive particle by utilization of cerous inorganic salt solution and homogeneous precipitation agent. The method comprises the following steps that: the cerous inorganic salt and the precipitation agent are prepared into solution with certain proportion; the solution is uniformly mixed through ultrasonic vibration; deposits are generated after the solution is heated to a certain temperature; serum is kept stand, aged, filtered and calcined, and then the CeO2 abrasive particle is prepared. The method also accelerates the nucleation rate through addition of surface active agent so as to reduce the reaction temperature, and simultaneously the nodulizing degree of the abrasive particle obtained is also good. The method prepares the CMP abrasive particle, wherein, the CMP abrasive particle belongs to the single-phase cubic crystal system; the space group is O<5>H-FM3M; the dispersibility is good; the grain fineness distribution is uniform; the shape is similar to a sphere; and the specific surface area BET is more than 0 and less than 50m<2> / g.

Description

technical field [0001] The present invention relates to abrasive particles CeO for chemical mechanical polishing (CMP) 2 The invention and a preparation method thereof belong to the technical field of chemical preparation of rare earth powder materials. Background technique [0002] With the rapid development of microelectronics technology, the requirements for electronic devices are getting higher and higher, and the design of traditional large devices can no longer meet the urgent requirements of miniaturization, high speed and precision. The size of the silicon wafer as the base material has changed from the original Towards Transformation; and its feature size is getting smaller and smaller, has reached 0.13um, and is expected to reach 0.05um in the next few years. At present, it is generally believed that global planarization is necessary for devices with a minimum feature size of 0.35um and below, and chemical mechanical polishing (CMP, Chemical Mechanical Polishi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09C1/68C09G1/02H01L21/304
Inventor 韩业斌朱兆武龙志奇黄小卫崔大立张顺利崔梅生
Owner GRIREM ADVANCED MATERIALS CO LTD
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