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Preparation of surface reinforced Raman active substrate of large area micro-nano dendritical structure array

A surface-enhanced Raman and tree-like structure technology, applied in the field of nanomaterials, can solve the problem of weak ability to capture gas molecules and achieve high-sensitivity SERS activity

Inactive Publication Date: 2010-08-18
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These strategies are mainly based on the distribution of hot spots on planar substrates, which are less capable of trapping gas molecules

Method used

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  • Preparation of surface reinforced Raman active substrate of large area micro-nano dendritical structure array
  • Preparation of surface reinforced Raman active substrate of large area micro-nano dendritical structure array
  • Preparation of surface reinforced Raman active substrate of large area micro-nano dendritical structure array

Examples

Experimental program
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Effect test

preparation example Construction

[0029] Fabrication of Silicon Microcolumn Arrays

[0030] The preparation method of the silicon microarray in the present invention is mainly based on silicon dry plasma etching technology. Figure 2 shows the flow chart of the preparation of the silicon microarray. Firstly, the micron lattice pattern is realized on the silicon wafer by ultraviolet lithography technology, and the etching mask used is ultraviolet positive photoresist. The ICP etching equipment used is the ICP180 plasma etching system produced by Oxford Instruments, UK. It is characterized by the following process conditions: temperature 15°C, etching gas SF6 flow rate 100 sccm, passivation gas C4F8 flow rate 100 sccm, RF power 10W, and ICP power 500W.

[0031] Assembly of Nanorod Arrays Based on Silicon Micropillar Arrays

[0032] To grow nanorod arrays on silicon microcolumn arrays, silicon or zinc oxide nanoarrays are grown mainly by chemical vapor phase synthesis based on a gas-liquid-solid mechanism. The...

Embodiment 1

[0037] Example 1: Different concentrations of rhodamine as probes, SERS test with micro-nano dendritic structure array as SERS active substrate

[0038] Using the SERS active substrate of the present invention, the SERS spectrum detection is carried out with different concentrations of rhodamine as probes. The Raman spectrometer used is a confocal focused Raman spectrometer (France, JY LABRAM-HR), the laser light source is an argon ion laser, the excitation wavelength is 514.5nm, the laser power reaching the sample is 1mW, and the integration time is 0.1 second. The test results show that the intensity of the rhodamine Raman scattering peak of the SERS active substrate of the present invention decreases with the decrease of the rhodamine concentration, which can be used for quantitative detection. See attached drawing 6.

Embodiment 2

[0039] Example 2: The SERS test of gas-phase TNT as a SERS active substrate with a micro-nano tree structure array

[0040] Using the SERS active substrate of the present invention, the gas-phase TNT was detected by SERS spectrum. Put the SERS active substrate of the present invention and the TNT solid powder into a certain volume (0.3 cubic meter) airtight container, take it out after 8 hours, and the TNT vapor concentration in the airtight container is regarded as the TNT saturated vapor pressure concentration under the standard state, i.e. 5ppbv . Carry out SERS test (see accompanying drawing 7) to active substrate, the Raman spectrometer used is the same as embodiment 1. , the test parameters are: the laser light source is an argon ion laser, the excitation wavelength is 514.5nm, the laser power reaching the sample is 1mW, and the integration time is 0.5 seconds. The test results show that the TNT Raman characteristic peak of the SERS active substrate of the present inve...

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Abstract

The invention discloses a preparation method for increasing raman activity of a basement in a surface of a large area of a micro-nano tree structure array, which firstly prepares a large area of a silicon micron cylinder array; a nanometer assembling technology is used for producing a nanometer stick in the silicon micron cylinder array. then a three-dimensional ordered periodic micro-nano structure array is obtained; and various appearance of metal nano-particles are embedded into the three-dimensional ordered periodic micro-nano structure array by using a way of a hydro-thermal synthesis method. A SERS activity basement of the invention can achieve homogenization from a centimeter grade to a large area. The invention designs SERS activity hot-particles on the three-dimensional ordered micro-nano structure, and assembles increasing effect of antenna, the increasing effect of metal / semiconductor intersection and the increasing effect of a gap into one body, then high sensitivity of the SERS activity is obtained, and the SERS activity hot-particles is firmly embedded into the tree micro-nano structure, then the invention is not only applicable for a SERS test of trace liquid-phaseanalyte, but also for the SERS test of trace gaseous-phase analyte.

Description

Technical field: [0001] The invention relates to the field of nanomaterials, the field of chemical and biological detection and identification, and the field of Raman spectrum detection technology, in particular to a method for preparing a surface-enhanced Raman active substrate of a large-area micro-nano tree structure array. Background technique: [0002] Because surface-enhanced Raman (SERS) can provide rich and high-quality surface molecular structure information, it has broad and huge application prospects in the fields of surface science, analytical science, and life medicine. However, reproducible, reliable and highly sensitive SERS active substrates are still obstacles to the practical application of SERS technology. The key lies in the uniformity of the large area of ​​the SERS active substrate. At present, the largest area that can achieve uniformity is only below the micron level. On the other hand, due to its ultra-high sensitivity, high selectivity, and short ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N21/65B81C1/00
CPCG01N21/658
Inventor 赵爱武梅涛王大朋倪林
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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