Light emitting diode and laser and its production method

Abstract

The present invention provides a LBD, a laser and a producing method thereof. Epitaxial growth of LBD and laser on single crystal silicon film quartz substrate or single crystal silicon film quartz substrate deposited buffer layer. Semiconductor LBD structure comprises of single crystal silicon film bonded quartz substrate, single silicon film electrode layer formed on quartz substrate, N layer epitaxial grown on LED of single silicon electrode layer and LED top electrode formed on P layer. Semiconductor laser structure comprises of single crystal silicon bonded quartz substrate, single crystal silicon electrode layer formed on quartz substrate, N layer epitaxial grown on LD of single crystal silicon electrode layer, active layer of LD on N layer, P layer of LD on LD active layer and top electrode of LD on P layer of LD. The present invention can realize bottom luminescence of LED and LD elements, improve luminescence efficiency of LED and LD.

Description

technical field [0001] The invention relates to a semiconductor light emitting diode and a semiconductor laser. In particular, it relates to a manufacturing method of a light-emitting diode and a laser for epitaxially growing a semiconductor light-emitting diode and a semiconductor laser on a single-crystal silicon thin-film quartz substrate, and the light-emitting diode and the laser. Background technique [0002] At present, GaN-based light-emitting diodes (LEDs) are usually fabricated on sapphire (Al 2 o 3 ) (S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett., 64, 1687, 1994) or on a silicon carbide (SiC) substrate (GROUPIII NITRIDE LED WITH SILICON CARBIDE SUBSTRATE, Edmond, John Adam ; Doverspike, Kathleen Marie; Kong, Hua-shuang; Bergmann, Michael John; U.S. Patent, 20050040426) they have substrates that are relatively expensive, and the diameter of the substrate is usually only 2-4 inches, which cannot be compared with mature silicon (Si) microelectronics Circu...

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Problems solved by technology

The research on using bulk silicon substrates to make GaN LEDs has also attracted people's attention recently (Selective area deposited blue GaN-InGaN multiple-quantum well light emitting diodes over silicon substrates, J.W.Yang, A.Lunev, G.Simin, A.Chitnis, M. Shatalov, and M.AsifKhan, APPLIED PHYSICS LETTERS VOLUME 76, NUMBER 3, 273, 2000), the difficulty lies in: the thermal mismatch and lattice mismatch between Si and GaN-type materials will lead to the tortoise of GaN-type thin film materials In addition, the bulk silicon substrate is opaque in the visible light range, which requires the LED to adopt a top-emitting structure, and 50% of the photons emitted from the GaN active layer have the potential to be absorbed by the bulk silicon substrate

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