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Method for preparing high volume-fraction carborundum granule-reinforced copper-based composite material

A technology of copper-based composite materials and silicon carbide particles, which is applied in the field of metal-based composite materials, can solve the problems of non-wetting of SiC and Cu substrates, difficulty in achieving pressureless infiltration, and difficulty in distribution of ceramic particles, etc., to achieve porosity The effect of low density, high density and low cost

Active Publication Date: 2008-04-09
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Current SiC P The problem in the preparation of / Cu is that SiC does not wet the Cu matrix, it is difficult for the ceramic particles to be evenly distributed in the metal matrix, and interfacial reactions will occur at high temperatures
However, due to the poor wettability between SiC and Cu, pressureless infiltration is difficult to achieve in this system and is rarely studied.

Method used

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  • Method for preparing high volume-fraction carborundum granule-reinforced copper-based composite material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Example 1: Preparation of SiC with a SiC volume fraction of 57% p / Cu composite material.

[0017] SiC powder with a particle size of 24 μm was mixed with a paraffin-based binder (65% paraffin, 15% high-density polyethylene, 15% polypropylene, and 5% stearic acid) on a twin-roll extruder to obtain SiC powder loading. The amount is 57% of the uniform feed; then injection molding is performed on a powder injection molding machine with an injection temperature of 140-160° C. and an injection pressure of 75-105 MPa to obtain a green body of a desired shape. The green body is solvent degreased in trichlorethylene, then slowly heated up to 450°C in a vacuum atmosphere to remove the binder, and then heated to 1000°C at a relatively fast speed for pre-sintering for 1 to 2 hours. Finally, pressureless impregnation with copper alloy (Cu-6Al) is carried out at 1400°C to 1450°C under vacuum atmosphere. Obtained SiC p The density of the / Cu composite is 97.8%, the content of the ...

Embodiment 2

[0018] Example 2: Preparation of SiC with a SiC volume fraction of 61% p / Cu composite material.

[0019] Using SiC powder with a particle size of 63 μm and a paraffin-based binder (65% paraffin, 20% high-density polyethylene, 10% polypropylene, and 5% stearic acid) with SiC powder as a loading of 61% in twin-roll extrusion After uniform mixing on a press, the feed material is injected on a powder injection molding machine at an injection temperature of 150-175° C. and an injection pressure of 75-125 MPa to obtain a green body. The green body should be solvent-degreased in trichlorethylene first, then slowly heated up to 450°C in a vacuum atmosphere to remove the binder, and then heated to 800°C at a relatively fast speed for pre-sintering for 1 to 2 hours. Finally, the copper alloy (Cu-5Al-2Fe-1Mn-2Ni) is infiltrated into the porous SiC preform by pressureless impregnation at 1410° C. to 1450° C. under vacuum atmosphere. Obtained SiC p The density of the / Cu composite is 9...

Embodiment 3

[0020] Example 3: Preparation of SiC with a SiC volume fraction of 64% p / Cu composite material.

[0021] SiC powders with particle sizes of 63 μm and 7 μm are used in a ratio of 3:1. First, the two powders were mixed evenly, and then the mixed powder was mixed with a paraffin-based binder (60% paraffin, 20% high-density polyethylene, 10% polypropylene and 10% stearic acid) with SiC powder as 64% loading. The amount is kneaded evenly on a twin-roll extruder, and then the green body of the required shape is produced on a powder injection molding machine with an injection temperature of 145-155 ° C and a pressure of 80-125 MPa. The green body is pre-sintered at 700°C in air after melting and degreasing. Then the copper alloy (Cu-4Ni) is infiltrated into the porous SiC preform by pressureless infiltration at 1420° C. to 1440° C. under vacuum atmosphere. Obtained SiC p The density of the / Cu composite material is 96.8%, the content of the reinforcing phase is 64% by volume, an...

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Abstract

The invention relates to a method to prepare high volume fraction silicon carbide particle to enhance copper matrix composite, belonging to the field of metal matrix composites. The technique is that: proper blended particle size distributed SiC powder is mixed with polymer component paraffin base binder in a volume proportion of 57-68% load in sudarpress, fine blended feedstock is obtained; injection mold in powder injection molding machine in the injection temperature of 150-175 DEG C and the injection pressure of 75-125MPa to obtain a required billet, the billet is degreased in a solution-doff + thermal-doff process, and is first sintered in 600-1120 DEG C to obtain pre-molded billet of porous SiC. Infiltrate copper alloy to the porous SiC pre-molded billet in the temperature of 1400-1450 DEG C in vacuum via non-pressure infiltration. So the high volume fraction SiCp / Cu composite is obtained. The invention can prepare intricate shaped thin wall SiCp / Cu composite parts, enhance the content of phase as high as 57-67% volume fraction, the density of the composite is high, the microstructure is evenly distributed, and the invention has the advantages of high utilization rate of material, high productivity, and low production cost.

Description

technical field [0001] The invention belongs to the research field of metal-matrix composite materials, and in particular provides a method of preparing high-volume silicon carbide particle-reinforced copper-matrix composite materials (SiC p / Cu) method. This near-net shape technology can prepare copper-based composite parts with high performance and complex shapes. Background technique [0002] High volume fraction (50-70%) SiC p / Cu can combine the respective advantages of Cu and SiC, and has the advantages of moderate density, high thermal conductivity, low CTE, and good wear resistance. SiC p The CET of / Cu can be reduced to 8.0~12.5×10 -6 K -1 , the thermal conductivity is as high as 250~325W / m K, and the weldability is better than that of SiC p / Al is good, and has good compatibility with CuAg-based solder. Therefore, SiC p / Cu is a potential electronic packaging material, which can be used as substrate material, heat exchanger and heat dissipation-cooling plat...

Claims

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Application Information

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IPC IPC(8): C22C1/00B22D23/04C22C9/01
Inventor 曲选辉章林何新波段柏华秦明礼
Owner UNIV OF SCI & TECH BEIJING
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