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MgO dual-potential magnetic tunnel structure with quanta effect and its purpose

A magnetic tunnel junction and quantum effect technology, which is applied in the fields of magnetic field controlled resistors, spin exchange coupled multi-layer films, static memories, etc., to achieve the effect of performance improvement

Active Publication Date: 2007-11-28
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the defects that existing single barrier tunnel junction materials still face many problems in practical application, on the basis of the successful preparation of tunnel junction materials with single crystal MgO insulating material as potential barrier layer, provide A MgO double-barrier magnetic tunnel junction with large current and high TMR effect under a certain external bias threshold value, and its application

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  • MgO dual-potential magnetic tunnel structure with quanta effect and its purpose
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  • MgO dual-potential magnetic tunnel structure with quanta effect and its purpose

Examples

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Embodiment 1

[0027] Example 1. Preparation of MgO Double Barrier Magnetic Tunnel Junction with Quantum Effect by Mg Oxidation Method

[0028] Using high-vacuum magnetron sputtering equipment on Si / SiO cleaned by conventional methods 2 On the substrate, a lower buffer conductive layer Ta with a thickness of 10nm; an antiferromagnetic pinning layer Ir-Mn with a thickness of 15nm; and a five-layer core film layer (M1 / I1 / M / I2 / M2)——Fe( 10nm) / MgO(2nm) / Fe(1nm) / MgO(2nm) / Fe(10nm); continue to deposit a 12nm antiferromagnetic Ir-Mn pinning layer and a 10nm Au top protective layer on top of the core film layer. The MgO insulating layer in the core film layer is formed by depositing 2nm metal Mg and oxidizing it by plasma for 30 seconds. The growth conditions of the above-mentioned magnetic multilayer film: prepared vacuum: 5×10 -7 Pa; high-purity argon gas pressure for sputtering: 0.07Pa; sputtering power: 120W; sample holder rotation rate: 20rmp; growth temperature: room temperature; growth rate: ...

Embodiment 2

[0030] Example 2, MgO (001) target direct sputtering method to prepare MgO double barrier magnetic tunnel junction with quantum effect

[0031] Utilize the high-vacuum magnetron sputtering equipment to sequentially deposit the lower buffer conductive layer Ru with a thickness of 10nm on the single crystal MgO(001) material substrate cleaned by conventional methods; the antiferromagnetic pinning layer Pt-Mn of 12nm; and five Core layer of layer structure (M1 / I1 / M / I2 / M2)-Co(15nm) / MgO(4nm) / Co(2nm) / MgO(4nm) / Co(15nm); continue above the core layer A 12 nm antiferromagnetic pinning layer Pt-Mn and a top 5 nm Pt protective layer were deposited. The MgO insulating layer in the core film layer is formed by direct sputtering of (001) single crystal MgO target. The growth conditions of the above-mentioned magnetic multilayer film: prepared vacuum: 5×10 -7 Pa; high-purity argon gas pressure for sputtering: 0.07Pa; sputtering power: 120W; sample holder rotation rate: 20rmp; growth temper...

Embodiment 3

[0033] Example 3, MgO and metal co-sputtering method to prepare doped MgO double barrier magnetic tunnel junction with quantum effect

[0034] Utilize the high-vacuum magnetron sputtering equipment to successively deposit on the GaAs material substrate that is cleaned by conventional methods a lower buffer conductive layer Ta with a thickness of 15nm; an antiferromagnetic pinning layer PtCr with a thickness of 12nm; and a five-layer core film layer (M1 / I1 / M / I2 / M2)-Co-Fe-B(20nm) / MgO(3nm) / Co-Fe(2nm) / MgO(3nm) / Co-Fe-B(20nm); above the core film layer Continue to deposit 10 nm of antiferromagnetic pinning layer PtCr and top 5 nm of Cr protection layer. The MgO insulating layer in the core film layer is doped with Al, which is formed by co-sputtering of (001) single crystal MgO target and metal Al target. The purpose is to reduce the resistance of the double barrier tunnel junction, and the Al doping content is 3% ( adjustable). The growth conditions of the above-mentioned magnet...

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Abstract

The invention discloses an MgO double-barrier magnetic tunnel knot with quantum effect, which comprises the following parts from upwards to downwards: first magnetic layer, first tunnel barrier layer, middle magnetic metal layer, second tunnel barrier layer and second magnetic layer. The invention reduces the thickness of middle magnetic metal layer to 0.5-4.5nm through modifying original making technique of MgO double-barrier magnetic tunnel, which is fit for new spin electronic piece, such as diode, rectifier, field effect transistor and TMR sensor.

Description

technical field [0001] The invention relates to a MgO double potential barrier magnetic tunnel junction with quantum effect and its application in spintronic devices. Background technique [0002] Since Julliére discovered the Tunnel Magnetoresis-tance (TMR) effect in Fe / Ge / Co multilayer films in 1975, the tunneling transport properties of spin-related electrons in magnetic tunnel junctions and the tunneling magnetoresistance ( TMR) effect has become one of the important research fields in condensed matter physics. At present, people have made remarkable achievements in the research of single-barrier magnetic tunnel junction (SBMTJ). For example, the TMR value at room temperature higher than 200% has been obtained experimentally in the single-crystal MgO barrier tunnel junction, which is much larger than the currently commonly used TMR value. Al-O barrier layer tunnel junction. However, single-barrier tunnel junction materials still face many problems in practical applicat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L27/22H01L29/82H01L29/66G11C11/15G11C11/16H01F10/32H10N50/10
Inventor 王琰卢仲毅张晓光韩秀峰
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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