Bandgap reference circuit and high-order temperature compensation method

Abstract

A bandgap reference circuit and a high-order temperature compensation method are disclosed. The bandgap reference circuit includes: a starting circuit, a bias circuit and a high-order compensated bandgap reference voltage generating circuit, where a compensation method of the high-order compensated bandgap reference voltage generating circuit is to perform curvature correction by using a sub-threshold current of a CMOS transistor to obtain a high-order temperature-compensated bandgap reference voltage source circuit. The present circuit has the advantages that a manner not increasing circuit complexity can be adopted for implementation, the accuracy of a bandgap reference source can be greatly improved, and power consumption, chip area and cost are reduced.

Description

BACKGROUNDTechnical Field[0001]The present invention relates to the field of circuit technologies, and in particular, to a bandgap reference circuit and a high-order temperature compensation method.Related Art[0002]In the prior art, a bandgap reference circuit is an essential circuit module that is indispensable in an analog integrated circuit. It is widely used in LED drive circuits, switching power converters, digital to analog converters, analog to digital converters, and linear voltage regulators.[0003]FIG. 1 shows a conventional bandgap reference voltage source having a working principle as follows: balancing by the summation of two voltages with opposite temperature coefficients: VBE with a negative temperature coefficient and a thermal voltage VT with a positive temperature coefficient. The thermal voltage is given by kT / q, where k is a Boltzmann constant, T is a temperature, and q is an electron charge. A high-gain operational amplifier has the same voltage at an operational...

AI Technical Summary

Benefits of technology

The present invention is a simple and efficient circuit that improves the accuracy of a bandgap reference source. It uses a sub-threshold current of a CMOS transistor for curvature correction, with a temperature coefficient of 6 ppm / °C. This circuit is easy to implement, does not increase power consumption or requirements, and can be used in any CMOS process. It achieves improved accuracy and reduces power consumption, chip area, and cost.

Problems solved by technology

However, a common high-order temperature compensation scheme has the following problems: 1) a compensation circuit is excessively complicated, and this increases the risk of process mismatch and increases the power consumption of a module; 2) a specific process is required, and this module cannot be manufactured by using a conventional process.

However, this circuit implements a first-order bandgap reference voltage through a MOS transistor, and a complicated circuit is used to implement high-order temperature compensation.

The present invention generates a bandgap reference through a conventional triode structure, and uses a sub-threshold current of an NMOS transistor to implement high-order compensation, which is excessively complicated, increases the risk of process mismatch, and increases the power consumption, cost and reject rate of modules.

Images