Gallium nitride-based devices and manufacturing process

Abstract

A nitride semiconductor is grown on a silicon substrate by depositing a few mono-layers of aluminum to protect the silicon substrate from ammonia used during the growth process, and then forming a nucleation layer from aluminum nitride and a buffer structure including multiple superlattices of AlRGa(1-R)N semiconductors having different compositions and an intermediate layer of GaN or other Ga-rich nitride semiconductor. The resulting structure has superior crystal quality. The silicon substrate used in epitaxial growth is removed before completion of the device so as to provide superior electrical properties in devices such as high-electron mobility transistors.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a divisional of U.S. application Ser. No. 10 / 721,488, filed Nov. 25, 2003, and claims the benefit of U.S. Provisional Patent Application Ser. No. 60 / 430,837, filed Dec. 4, 2002, the disclosures of which are incorporated by reference herein.BACKGROUND OF THE INVENTION [0002] The present invention relates to nitride semiconductor structures and devices and to processes for making the same. [0003] Nitride semiconductors such as gallium nitride and related semiconductors are widely regarded as desirable wide bandgap compound semiconductors. These materials have been adopted in optoelectronic devices such as light-emitting diodes (“LEDs”), laser diodes and photodiodes, and have also been employed in non-optical electronic devices such as field effect transistors (“FETs”) and field emitters. In optoelectronic devices, the wide bandgap of the material allows for emission or absorption of light in the visible-to-ultraviolet ...

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Benefits of technology

[0013] Methods according to the foregoing aspects of the present invention can provide high-quality gallium nitride-based semiconductors in the operative structure. Although the present invention is not limited by any theory of operation, it is believed that the superlattices introduce compressive strain into the gallium nitride-based semiconductor materials in the structure and, hence, prevent cracking of the gallium nitride based semiconductor layers. Further, it is also believed that the superlattices serve as “filters” which limit propagation of crystalline defects such as those referred to as threading dislocations from the lower layers of the structure upwardly into the operative structure at the top. These factors are believed to contribute to the high crystal quality of the gallium nitride-based semiconductors in the operative structure. Further, it is believed that the superlattices tend to limit diffusion of silicon into the gallium nitride-based semiconductors. As further discussed below, this prevent incidental, unwanted doping of the semiconductors in the operative structure with silicon from the substrate. It is also believed that placing the first superlattice of the buffer structure on the nucleation layer, without an intervening layer of gallium nitride between the nucleation layer and the first superlattice, further suppresses formation of crystal defects and hence improves crystal quality. It is additionally believed that pretreatment of the substrate with aluminum, prior to deposition of the nucleation layer, protects the substrate from etching by ammonia. Regardless of the mechanism of operation, however, the preferred methods according to this aspect of the invention can form high-quality nitride semiconductor films, on silicon substrates.

[0017] These aspects of the present invention incorporate the realization that the electrical performance limitations associated with a silicon substrate can be resolved readily by removing the substrate after growth and substituting a different base material which typically would be unsuitable for epitaxial growth.

Problems solved by technology

Further, it is believed that the superlattices tend to limit diffusion of silicon into the gallium nitride-based semiconductors.

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