Method for preparing inorganic compound gallium nitride nanowire

Abstract

The disclosed preparation method for gallium nitride nano line comprises: using gallium oxide as material, indium oxide as catalyst, ammonia gas as reaction gas, argon gas as protective atmosphere, anhydrous alcohol as mixture, and all of acetone, anhydrous alcohol and deionized water as abluent for single-crystal silicon substrate; refining the material, controlling proportion and purity; optimizing the usage for catalyst, reaction gas, protective gas and other auxiliary agents; grinding and screening the material, supersonic cleaning the substrate; forming suspension to coat on the substrate; drying, vacuumizing, forcing ammonia gas, ammonifying at high temperature, growing the nano line; cooling, detecting, analyzing, and obtaining the objective product with diameter of 50nm-70nm and average length 90mum and well performance. This invention has short process, high yield of 95%, well purity of 98%, and belongs to ideal method for gallium nitride nano line.

Description

technical field [0001] The invention relates to a preparation method of an inorganic compound gallium nitride nanowire, which belongs to the technical field of preparation and growth methods of inorganic compounds. Background technique [0002] Gallium nitride is a III-V inorganic compound semiconductor material with a bandgap of 3.4eV at room temperature and an exciton binding energy of 20meV. It has excellent material mechanical properties, mechanical properties, high luminous efficiency, high thermal conductivity, and High temperature, acid and alkali resistance, etc., known as the third-generation semiconductor material, is an ideal material for making blue and green light-emitting diodes, laser diodes, ultraviolet detectors and optoelectronic devices. Its one-dimensional structure is in high electron mobility nanoelectronic devices , full-color flat panel display and other fields have broad application prospects. [0003] The preparation and growth methods of gallium n...

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Problems solved by technology

[0003] The preparation and growth methods of gallium nitride nanowires are divided into two forms, namely physical method and chemical method. Among them, physical method includes sublimation method, laser ablation method, laser deposition method, evaporation condensation method, arc discharge method, chemical method Methods include direct reaction method, chemical vapor deposition method, hot wire chemical vapor deposition method, solution reaction method, electrochemical method, polymerization method, template method, etc.; although these preparation methods can prepare and generate gallium nitride nanowires , but there are also many deficiencies, some have long preparation cycle, large energy waste, and serious pollution; some have low yield and low product purity; The process is difficult to realize; the chemical, physical, and optical properties of some prepared products are not stable enough, which is not conducive to the wide application of the product; the process flow of some preparation and growth methods is not tightly connected, and the ratio is unreasonable, so that the morphology of the product is not ideal.

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