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Low temperature method for preparing Nano crystal thin film of semiconductor in Znl-xMgxO structure of wurtzite

A technology of zn1-xmgxo and nanocrystals, which is applied in the field of preparation of oxide semiconductor nanocrystal films, can solve the problems of not being able to obtain the wurtzite structure, and achieve the effect of being easy to obtain, non-toxic and side effects, and uniform and dense crystal grains

Inactive Publication Date: 2006-02-01
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this technique cannot obtain Zn which has a wurtzite structure and has the characteristics of an n-type semiconductor. 1-x Mg x O(0≤x≤0.36) Nanocrystalline Films

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] (1) Mix MgO and ZnO powders with a purity of ≥99.99% according to the Mg component y=1% component ratio, mechanically grind, press and shape, and sinter at a high temperature of 1250°C to form (MgO) 0.01 (ZnO) 0.99 target;

[0044] (2) Put the Si substrate into a solution mixed with concentrated sulfuric acid and hydrogen peroxide at a ratio of 1:1 and boil for 10 minutes to remove surface organic matter; then immerse the Si substrate in a 10% hydrofluoric acid solution for 30 seconds, take it out Rinse repeatedly with deionized water; then place the Si substrate in HCl:H 2 o 2 : Boil in deionized water for 15 minutes in a mixed solution of 1:1:6 to remove surface inorganic matter; after taking it out, rinse it repeatedly with deionized water and soak in HF solution for a few seconds, and use N 2 After drying the substrate, put it into the growth chamber quickly, and the (MgO) sintered at 1200°C 0.01 (ZnO) 0.99 The ceramic target material is placed in the crucible,...

Embodiment 2

[0054] (1) MgO and ZnO powders with a purity of ≥99.99% are mixed according to the Mg component y=2% component ratio, mechanically milled, pressed and shaped, and sintered at a high temperature of 1000°C to form (MgO) 0.02 (ZnO) 0.98 target;

[0055] (2) Put the white sapphire substrate in concentrated H 2 SO 4 : Concentrated HNO 3 Boil in a 1:1 mixture for 3 minutes, take it out and rinse it repeatedly with deionized water, then boil it 3 times with deionized water; finally use N 2 Blow dry and quickly pack it into the grow chamber. (MgO) sintered at a high temperature of 1000°C 0.02 (ZnO) 0.98 The ceramic target material is placed in the crucible, and the target source and the substrate are separated by a baffle.

[0056] (3) Vacuum the reaction chamber to 3×10 with a diffusion pump -3 Pa.

[0057] (4) Heating the substrate, heating the substrate to a growth temperature of 200°C.

[0058] (5) Heating (MgO) with a high-energy electron beam with an accelerating volta...

Embodiment 3

[0065] (1) MgO and ZnO powders with a purity of ≥99.99% are mixed according to the Mg component y=0.5% component ratio, mechanically milled, pressed and shaped, and sintered at a high temperature of 1500°C to form (MgO) 0.005 (ZnO) 0.995 target;

[0066] (2) Place the glass substrate in deionized water and ultrasonically clean it three times, each time for 3 minutes; then place the glass substrate in a water bath in sodium carbonate solution for 15 minutes to remove surface organic matter, and rinse it repeatedly with deionized water after taking it out; Hydrogen peroxide, hydrochloric acid, and deionized water were mixed in a solution of 1:1:6 in a water bath at 80°C for 15 minutes to remove heavy ions on the surface. After taking it out, rinse it repeatedly with deionized water; Blow dry and quickly place it into the growth chamber. (MgO) sintered at a high temperature of 1500°C 0.005 (ZnO) 0.995 The ceramic target is placed in the crucible, and the target source is sepa...

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Abstract

A low-temp process for preparing the nanocrystal film of the semiconductor Zn1-xMgxO (x=0-0.36) with wurtzite structure includes emitting high-energy electron beams by electronic gun, focusing, bombarding the target made up of MgO and ZnO through high-temp sintering, evaporating ZnO and MgO moleculae, depositing on the surface of heated substrate, diffusing to form crystal nuclei, continuous growing to form nanocrystal film, and high-temp (300-600 deg.C) annealing in O2.

Description

technical field [0001] The invention belongs to the technical field of preparation of oxide semiconductor nanocrystal films, and specifically relates to a kind of high-quality wurtzite structure Zn which is grown on different substrate materials at a lower temperature and annealed at a high temperature. 1-x Mg x Preparation technology of O(0≤x≤0.36) semiconductor nanocrystal film. technical background [0002] ZnO series materials, like GaN materials, are wide bandgap semiconductors with wurtzite structure, and are one of the important optoelectronic and microelectronic materials. In recent years, GaN materials have been widely used in optoelectronic devices such as blue light, near-ultraviolet light-emitting diodes, laser diodes, and ultraviolet light detectors. In the application field of microelectronic devices, high electron mobility developed by GaN materials Transistor (HEMT) devices are favored by people for their advantages of high temperat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/30C23C14/54C23C14/06C23C14/58H01L21/203
Inventor 吴惠桢邱东江陈乃波徐天宁余萍
Owner ZHEJIANG UNIV
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