Method of preparing LiGaO2/beta-Ga2O3 composite backing material

Abstract

The invention provides LiGaO2 / beta--Ga2O3 composite substrate material and its preparation method, including the following processes: put the LiGaO2 and Li2O composite material with blowholes into the platinum alloy crucible; arrange or suspense the double-face or single-face polishing beta--Ga2O3 on the platinum alloy wire, add the crucible cover that is covered with the mixture powder of LiGaO2 and Li2O and thermocouple, airtight the top of the crucible with the platinum alloy cover, put it into the resistance furnace; heat up the resistance furnace to the temperature about 700-1400deg.C, constant temperature 20-100 hours, Li2O diffuses into beta--Ga2O3 crystal strip, get the LiGaO2 / beta--Ga2O3 composite substrate material after the temperature lowering. This invention solves the problems of high mismatch degree of alpha-AL2O3 substrate lattice and not easily getting the big size and good quality of LiGaO2 monocrystal substrate. It is suitable for the epitaxial growth of InN-GaN film with good quality.

Description

technical field [0001] The present invention relates to a LiGaO 2 / β-Ga 2 o 3 Composite substrate material and its preparation method. LiGaO 2 / β-Ga 2 o 3 The composite substrate material is mainly used for the epitaxial growth of InN-GaN-based blue light semiconductor. Background technique [0002] Group III nitride semiconductor material InN-GaN has excellent characteristics, such as stable physical and chemical properties, high thermal conductivity and high electron saturation velocity, and the optical transition probability of direct bandgap materials is an order of magnitude higher than that of indirect bandgap materials. Therefore, broadband Gap InN-GaN-based semiconductors show promising applications in short-wavelength light-emitting diodes, lasers, and UV detectors, as well as high-temperature electronic devices. Due to the relatively high melting point of InN-GaN, N 2 The saturated vapor pressure is high, and the preparation of InN-GaN bulk single crystal i...

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Problems solved by technology

[0005] Prior substrate (α-Al 2 o 3 and LiGaO 2 ) The significant disadvantages that exist are: (1) use α-Al 2 o 3 As substrate, α-Al 2 o 3 The lattice mismatch between GaN and GaN is as high as 14%, so that the prepared GaN film has a high dislocation density and a large number of point defects; (2) due to LiGaO 2 The melt is prone to non-stoichiometric volatilization at high temperatures, and crystal growth is difficult, making it difficult to obtain large-size, high-quality LiGaO 2 single crystal, moreover, the processing of the substrate causes a lot of waste of raw materials

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