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Amorphous crystallization preparation method for nano crystal thermoelectric semiconductor material

A thermoelectric semiconductor and nanocrystalline technology, applied in the field of new energy materials, can solve the problems of easy introduction of other impurities, uneven grain size, difficulty in obtaining high-purity thermoelectric semiconductor materials, etc. The effect of easy large-scale preparation

Inactive Publication Date: 2005-03-16
WUHAN UNIV OF TECH
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Problems solved by technology

[0004] At present, nanocrystalline thermoelectric semiconductor materials are mainly prepared by high-energy ball milling combined with certain sintering methods. The main disadvantages of this method are uneven grain size, easy introduction of other impurities during the ball milling process, and difficulty in obtaining high-purity thermoelectric semiconductor materials.

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  • Amorphous crystallization preparation method for nano crystal thermoelectric semiconductor material

Examples

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Embodiment 1

[0021] Example 1: Bulk CoSb 3 Preparation of Nanocrystalline Thermoelectric Semiconductor Materials

[0022] Using cobalt powder and antimony powder as raw materials, melt reaction at 1100°C to obtain uniform CoSb 3 Melt, using copper single copper roll quenching technology, with 10 5 ℃ / sec cooling rate to prepare CoSb 3 Amorphous alloy strips, the obtained strips have a width of about 2-3 mm, a thickness of about 25 μm, a length of several meters, and a smooth surface.

[0023] Grind strips weighing about 5g into powder, then put them into a φ10mm graphite mold for compaction, and then move them together with the mold into the discharge plasma rapid recrystallization and densification sintering (SPS) equipment. The vacuum degree in the furnace is 10 -3 Pa, the temperature was raised to 600°C for recrystallization, and the pressure of 30MPa was used for densification. The recrystallization and densification time was 7 minutes. After cooling, take out the mold and get a blo...

Embodiment 2

[0024] Example 2: Bulk Ba filled nano-skutterudite compound Ba y co 4 Sb 12 Preparation of Thermoelectric Semiconductor Materials

[0025] Using bulk barium, cobalt powder and antimony powder as raw materials, melt reaction at 1100°C to obtain uniform Ba-filled Ba y co 4 Sb 12 Melt, using copper single copper roll quenching technology, with 10 5 ℃ / sec cooling rate to prepare Ba y co 4 Sb 12 Amorphous alloy strips, the obtained strips have a width of about 2-3 mm, a thickness of about 25 μm, a length of several meters, and a smooth surface.

[0026] Grind strips weighing about 8g into powder, then put them into a φ20mm graphite mold for compaction, and then move them together with the mold into the discharge plasma rapid recrystallization and densification sintering (SPS) equipment. The vacuum degree in the furnace is 10 -3 Pa, the temperature was raised to 600°C for recrystallization, and the pressure of 30MPa was used for densification. The recrystallization and den...

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Abstract

A nanocrystalline thermoelectric semiconductor material amorphous crystallization production method is provided, compriseing the stepss of: first adopting high-frequency heating and obtaining uniform alloy melt at 1100 DEG C, then cooling smelt to get thin strip or filament shaped amorphous sample using liquid phase quenching method, cooling speed being 10<5>-10<6> DEG C / sec, grinding amorphous sample and place in mould, placing mould in discharge plasm fast recrystallization and densification sintering apparatus, recrystallization and densification temperature being 600 DEG C, pressure 30Mpa,time 7-8min, obtaining high purity, average mean crystal grain size 70-80nm,uniform crystalline grain, high performance block nanocrystalline thermoelectric semiconductor material. The invention provides a technology for scale preparation of block nanocrystalline thermoelectric semiconductor material.

Description

technical field [0001] The invention relates to a preparation method of a nanocrystalline thermoelectric semiconductor material, which belongs to the field of new energy materials. Background technique [0002] As a new type of energy conversion technology in the 21st century, thermoelectric conversion technology is used as thermoelectric power generation and thermoelectric cooling devices in military, medical , Civil and other aspects have broad application prospects. Especially with the increasingly serious environmental problems and energy problems, thermoelectric conversion technology shows great potential in the conversion and utilization of solar energy and the application as a micro power system. The key to the practical application of thermoelectric conversion technology is the research and development of high-performance thermoelectric semiconductor materials. [0003] When the microscale of thermoelectric semiconductor materials decre...

Claims

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Application Information

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IPC IPC(8): C22C1/04C22C12/00C22C19/07
Inventor 唐新峰宋波熊聪刘桃香张清杰
Owner WUHAN UNIV OF TECH
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