Semiconductor device and manufacturing method of the same

Abstract

This invention provides a semiconductor device which assures an accurate electric and medicinal connections between electrodes by connecting the plurality of semiconductor chips having electrodes with a low melting point metallic member. Bump electrodes are formed on a surface of a first semiconductor chip (1). Through holes (11) are formed in a second semiconductor chip (10). Through electrodes (12) having a clearance (13) in a central part of the through hole (11) are formed. A low melting point metallic member (4) is interposed between connection surfaces of the bump electrodes (3) and the through electrodes (12). A part of the low melting point metallic member, when melted is allowed to flow into the clearance (13). By this arrangement a short circuit between the bump electrodes (3, 3) caused by providing an excess amount of the low melting point member (4) in the space between adjacent bump electrodes (3, 3) can be prevented.

Description

technical field [0001] The present invention relates to a manufacturing method of a semiconductor device, in particular to a mounting technology of a semiconductor device having a through-electrode. Background technique [0002] Conventionally, there has been known a mounting structure in which a plurality of semiconductor chips having bump electrodes or penetrating electrodes are electrically and mechanically connected to each other via low-melting-point metal members such as solder. [0003] Figure 8 It is a sectional view explaining the manufacturing method of the semiconductor device of a conventional example. Such as Figure 8 As shown in (a), a passivation film 51 is formed on the surface of the first semiconductor chip 50 . Then, a plurality of bump electrodes 52 are formed on the surface of the first semiconductor chip 50, and a low melting point metal member 53 is attached on the front end thereof. [0004] On the other hand, in the second semiconductor chip 60 ,...

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Problems solved by technology

Then, the electrical bonding area between the bump electrodes 52 and the penetration electrodes 62 decreases, so that the connection resistance increases or disconnection occurs, and the electrical connection characteristics may deteriorate.

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