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F, Mn codoped deposit nano SnO2 transparent thermal-insulation film

A co-doping and nanotechnology, applied in the field of new functional materials, can solve problems such as deepening equipment and process difficulties

Inactive Publication Date: 2004-11-17
雷智 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In actual production, these factors have deepened the difficulty of equipment and processes

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Example 1: Co-doping F and Mn by chemical CVD to deposit nanometer SnO 2 transparent partition

[0013] hot film

[0014] The tin salt, the F compound and the Mn salt are respectively dissolved in organic solutions such as water or ethanol to form reaction precursors. Using the method of heating, the reaction precursors are heated and vaporized respectively, and transported to the surface of the substrate respectively, so that the precursor gases are mixed and reacted at a high speed on the surface of the substrate to form SnO 2 particles. The particles form a thin film on the substrate surface. The temperature of chemical reaction is 500~650℃. For the ratio of doping elements, the range of F / Sn element ratio in the reaction precursor may be 0.01-1.5, and the range of Mn / Sn element ratio may be 0.01-1. By optimizing the ratio of F and Mn elements, a high-quality transparent heat-insulating film can be obtained on the glass surface, making ordinary glass a ...

Embodiment 2

[0015] Example 2: Co-doping F and Mn by ultrasonic spray pyrolysis to deposit nano-SnO 2 transparent

[0016] insulation film

[0017] Firstly, Sn salt, F compound and Mn salt are dissolved in organic solution such as water or ethanol to form a reaction precursor. Then use ultrasonic vibration method to turn the reaction precursor liquid into tiny mist droplets. Generally, the ultrasonic oscillation frequency for commercial use is 1.7MHz, and the corresponding droplet diameter is about 1μm. The mist is carried by filtered high-pressure air, oxygen and nitrogen, etc., and sprayed on the surface of the heated glass substrate, and the glass is heated to 350-650°C. By optimizing the ratio of doping elements F and Mn, a high-quality transparent heat-insulating film can be obtained on the glass surface, making ordinary glass a Low-E glass. In the reaction precursor liquid, the ratio of F / Sn elements can be adjusted between 0.01-1.5, and the ratio of Mn / Sn elements can b...

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Abstract

The invention discloses an F, Mn co-doping deposition nano-SnO2 transparent heat insulating thin film, wherein the F, Mn element co-doping effect is utilized to increase the number charge carriers in the thin film material, thus increasing the index of thin film reflection to infrared rays. The invention can prevent the excess doping of one single element, it can be applied to chemical CVD or supersonic spraying thermal dissociation deposition.

Description

A technical field [0001] The invention belongs to the field of new functional materials. Two background technology [0002] Transparent thermal insulation film is a new product that has only appeared in the domestic market in recent years. When the transparent thermal insulation film is deposited on the glass, it becomes low-emissivity glass, that is, the radiation to heat is reduced. Low-emissivity glass, also known as Low-E glass, is characterized by visible light transmittance greater than 80%, and infrared reflectivity greater than 80%. It has a blocking effect on ultraviolet rays below 380nm, and less than 0.2 on thermal radiation. The working principle of the transparent thermal insulation film is due to the metal and some metal oxides (such as ITO, SnO 2 , CdO, CdSnO 4 , ZnSnO 4 ) There are a large number of carriers (such as electrons or voids) that can move freely in the body. The vibration frequency of the carrier is consistent with the frequency of the incid...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/25
Inventor 雷智杜勇
Owner 雷智
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