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Dipped barium tungsten cathode based on tungsten irridium alloy and its preparation method

A barium-tungsten cathode and alloy technology, which is applied in cold cathode manufacturing, electrode system manufacturing, discharge tube/lamp manufacturing, etc., can solve the problems of complicated processes, insufficient emission current of the impregnated barium-tungsten cathode, and long life, etc. Good process repeatability and stability, facilitate electron emission, and shorten the production cycle

Inactive Publication Date: 2004-10-20
INST OF ELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

However, it has defects such as complicated process, high difficulty, poor repeatability and stability, and high cost. In addition, with the increasing requirements of high-power electronic tubes, the original traditional impregnated barium-tungsten cathode has insufficient emission current and long life. The disadvantages of high temperature and insufficient work stability are increasingly unable to keep up with the development of the situation

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  • Dipped barium tungsten cathode based on tungsten irridium alloy and its preparation method
  • Dipped barium tungsten cathode based on tungsten irridium alloy and its preparation method
  • Dipped barium tungsten cathode based on tungsten irridium alloy and its preparation method

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Embodiment Construction

[0021] The impregnated barium tungsten cathode provided by the invention is composed of 10-30% iridium powder and 70-90% tungsten powder in weight ratio, and aluminate is impregnated in the pores.

[0022] The method for preparing the above-mentioned impregnated barium tungsten cathode provided by the present invention is:

[0023] 1) Use micro-particles, high-purity tungsten powder and iridium powder, put the tungsten powder and iridium powder into a hydrogen furnace at 1200 ℃ for annealing to thoroughly purify and enhance their plasticity.

[0024] 2) Take 20% iridium powder and 80% tungsten powder according to the weight ratio, and mix and grind the two materials to ensure uniformity. The mixture was pressed into a flat-topped cathode body using a die containing a cylinder of molybdenum. The flat top cathode body has a diameter of 2-5mm and a thickness of 1-4mm. The flat top cathode body prepared in this example has a diameter of 3.6 mm and a thickness of 2 mm.

[0025] ...

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Abstract

Cathode is composed of 10-30% wt iridium powder and 70-90% wt tungsten powder, and dipping aluminate is in small opening. Preparation method is as following: annealing is carried out for iridium powder and tungsten powder in hydrogen furnace under 1000-1500deg.C; mixing iridium powder and tungsten powder and grinding the mixture evenly; pressing the mixture by stamper with molybdenum tube being inside so as to prepare flat-headed cathode; putting cathode in hydrogen furnace for heat preservation 1-10 hours under 1500-2000 deg.C; putting cathode in aluminate powder, at hydrogen atmosphere, 1500-2000 deg.C for 1-10 minutes and cleaning out float salt; installing heater obtains cathode needed.

Description

technical field [0001] The invention relates to a barium-tungsten cathode on an electron tube device, in particular to an impregnated barium-tungsten cathode based on a tungsten-iridium alloy. [0002] The present invention also relates to a method for preparing the impregnated barium tungsten cathode. Background technique [0003] The traditional impregnated barium tungsten cathode has the characteristics of low surface work function, large emission current, long life, good working stability, strong resistance to poisoning and ion bombardment, so it is widely used as an electron source in various fields. High-power electronic tube devices, such as klystrons, magnetrons, traveling wave tubes, and high-definition and high-brightness picture tubes. However, it has defects such as complicated process, high difficulty, poor repeatability and stability, and high cost. In addition, with the increasing requirements of high-power electronic tubes, the original traditional impregnat...

Claims

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Application Information

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IPC IPC(8): H01J1/14H01J9/02
Inventor 张红卫丁耀根白振纲
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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