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Vapor growth method for metal oxide dielectric film and PZT film

A technology of vapor phase growth and dielectric film, which is applied in the direction of electrical components, metal material coating technology, circuits, etc., and can solve problems such as continuous alignment difficulties

Inactive Publication Date: 2004-05-12
NEC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After deposition of a metal oxide dielectric film such as PZT, the film can become opaque depending on its crystalline state, causing irregular reflections. This irregular reversal makes the alignment marks opaque and leads to continuous reflection standard difficulty

Method used

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  • Vapor growth method for metal oxide dielectric film and PZT film
  • Vapor growth method for metal oxide dielectric film and PZT film
  • Vapor growth method for metal oxide dielectric film and PZT film

Examples

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example

[0106] Examples include: (i) a method wherein all organometallic material gases are used as the material of the metal oxide dielectric under the first deposition condition to form a layer having a perovskite crystal on the surface of the upper base conductive material an initial nucleus of a crystal of the perovskite crystal structure, and then under a second deposition condition, a further film of the perovskite crystal structure is grown on top of the initial nucleus, and (ii) a method wherein only part of the perovskite crystal structure is used under the first deposition condition An organometallic material gas that will be the material of the metal oxide dielectric to form an initial nucleus of a perovskite crystal on the base conductive material, and further grow on top of the initial nucleus under a second deposition condition with calcium A film of titanite crystal structure.

[0107] For the deposition of PZT, in the above method (i), deposition is performed using sou...

Embodiment 1-1

[0145] refer to Figure 28 , Example 1-1 of device production will be described, in which a memory element is produced using a vapor phase growth method according to the present invention. Oxide films are deposited on silicon substrates by wet oxidation. After ions are implanted with dopants such as boron and phosphorus, an n-type or p-type well is formed. Then, gates and diffusion layers are formed as described below. First, a gate oxide film 1601 is formed by wet oxidation, and a polysilicon film 1602 to be a gate is deposited and etched away. A silicon oxide film is deposited on the polysilicon film, and then the silicon oxide film is etched away to form oxide films 1603 of side walls. Next, dopant such as boron or arsenic is ion-implanted to form n-type or p-type diffusion layer 1604 . A Ti film is deposited on the surface, and said Ti film reacts with silicon. Unreacted Ti is etched away to form a Ti silicide layer 1605 on the gate 1602 and the diffusion layer 1604 ....

Embodiment 1-2

[0151] Although in Figure 28 shows the method of separating the capacitors by dry etching after the electrode below the capacitor is formed, a single capacitor can also be prepared by the following method: as shown in Device Production Example 1-2 as a modified method, after separating the capacitor After the lower electrode is Ru / Ti / TiN / Ti, PZT is deposited to form the upper electrode on Ru, and then the upper electrode is separated. refer to Figure 29 Device Production Examples 1-2 are briefly described. exist Figures 29 to 32 in, with Figure 28 The common parts are represented by the same symbols.

[0152] First, as in Production Example 1-1 ( Figure 29 As described in (A)), a transistor is formed on a silicon substrate, and a first interlayer insulating film 1607 and a plug 1608 buried therein are formed. Then, a Ti film 1709, a TiN film 1710, and Ti, which are electrode layers under the capacitor, are deposited sequentially by sputtering, followed by a Ru film ...

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Abstract

For forming a metal-oxide dielectric film having a perovskite type of crystal structure represented by ABO3 on a base conductor material using organometallic source gases, initial perovskite crystal nuclei or an initial amorphous layer having an amorphous structure are formed on the base conductor material under the first deposition conditions; and a film having a perovskite crystal structure is further grown on the initial crystal nuclei or the initial amorphous layer under the second deposition conditions. In the process, the first deposition conditions meet at least one of the requirements: (a) a lower substrate temperature than that in the second deposition conditions; and (b) a higher source gas pressure than that in the second deposition conditions. This process can be used to deposit a film such as PZT exhibiting a reduced leak current.

Description

technical field [0001] The invention relates to a preparation method of a semiconductor device containing a capacitance element. More particularly, it relates to a method of depositing highly dielectric or ferroelectric films for use in capacitors or gates in semiconductor integrated circuits using organometallic source gases. Background technique [0002] Recently, ferroelectric memories using ferroelectric capacitors and dynamic random access memories (DRAMs) have been extensively researched and developed. These ferroelectric memories and DRAMs contain select transistors. They store information using a capacitor connected to one of the diffusion layers in the select transistor, which acts as the storage element. Ferroelectric capacitors include: for example, Pb(Zr,Ti)O as the capacitor insulating film 3 (hereinafter, referred to as "PZT"), and ferroelectric capacitors can store nonvolatile information by polarizing the ferroelectric material. On the other hand, high-di...

Claims

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Application Information

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IPC IPC(8): C23C16/02C23C16/40C23C16/44C23C16/455H01L21/314H01L21/316
CPCC23C16/0272C23C16/45557H01L21/31691C23C16/409H01L21/02197H01L21/02271
Inventor 辰巳徹
Owner NEC CORP
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