MgIn*O*/MgO composite underlaying material and preparing process thereof
A composite substrate, mgin2o4 technology, applied in semiconductor/solid-state device manufacturing, semiconductor lasers, lasers, etc., can solve the problems of less use, increased device volume, waste of raw materials, etc., and achieve the effect of easy operation and simple preparation process
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[0025] figure 1 is a schematic diagram of a pulsed laser deposition (PLD) system. The mechanism of the PLD method is to first pass a KrF excimer laser with a pulse width of 25-30ns (laser wavelength is 248nm) through the lens at about 10J / cm 2 The energy density concentrates the light, and irradiates the In in the vacuum device through the optical window. 2 o 3 Target material, after the target material absorbs the laser light, it becomes a high-temperature molten state due to electronic excitation, so that the surface of the material is evaporated and gasified, and the gaseous particles are released and diffused in the form of columns. On a properly heated MgO single crystal substrate placed a few centimeters away, it adheres and accumulates to deposit In 2 o 3 film.
[0026] The pulsed laser deposition (PLD) technique of the present invention prepares composite substrate material MgIn 2 o 4 The specific process of / MgO is as follows:
[0027] Send the polished and c...
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