MgIn*O*/MgO composite underlaying material and preparing process thereof

A composite substrate, mgin2o4 technology, applied in semiconductor/solid-state device manufacturing, semiconductor lasers, lasers, etc., can solve the problems of less use, increased device volume, waste of raw materials, etc., and achieve the effect of easy operation and simple preparation process

Inactive Publication Date: 2004-03-17
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] (2) Since the lattice mismatch between MgO crystal and GaN reaches 13%, and it is not stable enough in MOCVD atmosphere, it is less used;
[0010] (3) The above transparent oxide substrates are not conductive, making the device difficult to manufacture, and also increases the volume of the device, resulting in a lot of waste of raw materials

Method used

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  • MgIn*O*/MgO composite underlaying material and preparing process thereof
  • MgIn*O*/MgO composite underlaying material and preparing process thereof

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Embodiment Construction

[0025] figure 1 is a schematic diagram of a pulsed laser deposition (PLD) system. The mechanism of the PLD method is to first pass a KrF excimer laser with a pulse width of 25-30ns (laser wavelength is 248nm) through the lens at about 10J / cm 2 The energy density concentrates the light, and irradiates the In in the vacuum device through the optical window. 2 o 3 Target material, after the target material absorbs the laser light, it becomes a high-temperature molten state due to electronic excitation, so that the surface of the material is evaporated and gasified, and the gaseous particles are released and diffused in the form of columns. On a properly heated MgO single crystal substrate placed a few centimeters away, it adheres and accumulates to deposit In 2 o 3 film.

[0026] The pulsed laser deposition (PLD) technique of the present invention prepares composite substrate material MgIn 2 o 4 The specific process of / MgO is as follows:

[0027] Send the polished and c...

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Abstract

The invention discloses a MgIn#-[2]O#-[4] / MgO composite underlaying material and and method for the making same, which comprises a MgIn#-[2]O#-[4] covering layer on the single-crystal MgO, the process for preparing the composite backing material comprises, preparing In#-[2]O#-[3] thin film on the MgO single crystal substrate using pulsed laser deposition process, solid phase reaction of In#-[2]O#-[3] and MgO at high temperature, thus forming a MgIn#-[2]O#-[4] covering layer on the single-crystal MgO, the process by the invention realizes simple preparing process and easy operation íí

Description

technical field [0001] The invention relates to a MgIn used for the epitaxial growth of InN-GaN-based blue light semiconductor 2 o 4 / MgO composite substrate material and its preparation method. Background technique [0002] Wide bandgap III-V compound semiconductor materials represented by GaN are receiving more and more attention, and they will be used in blue and green light-emitting diodes (LEDs) and laser diodes (LDs), high-density information reading and writing, underwater It has broad application prospects in communication, deep water exploration, laser printing, biological and medical engineering, as well as ultra-high-speed microelectronic devices and ultra-high-frequency microwave devices. [0003] Due to GaN's high melting point, high hardness, and high saturated vapor pressure, high temperature and high pressure are required to grow large-sized GaN bulk single crystals. The Polish High Pressure Research Center only produced strips with a width of 5 mm at a hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/84H01L33/00H01L33/02H01S5/00
Inventor 徐军周圣明杨卫桥彭观良李抒智周国清宋词杭寅蒋成勇赵广军司继良
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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