Zinc oxide-based homogeneous structure transparent rram components and manufacturing method

Abstract

The invention relates to a zinc oxide-based homogeneous structure transparent resistive random access memory (RRAM) component and a manufacturing method. The storage element is composed of a sandwich structure of "electrode layer / resistance variable oxide layer / electrode layer" prepared in sequence on a quartz glass substrate. Wherein, the material of the electrode layer is a ZnO-based doped transparent conductive film, and the material of the resistive switch oxide layer is ZnO or a ZnO-based doped resistive thin film. On the premise of maintaining the transparency of the material, by adjusting the components of the ZnO-based thin film, the conductivity and resistance transition performance of the thin film material are controlled, so as to achieve the purpose of stable storage. The biggest advantage of the memory cell structure of the present invention is that it is based on low-cost zinc oxide-based homogeneous structure film materials, and a homogeneous RRAM memory cell structure with stable performance and good transparency is obtained through doping control, which is beneficial to RRAM memory devices Develop towards low-cost, high-performance transparent devices.

Description

technical field [0001] The invention relates to a transparent RRAM (resistive random access memory) component with a zinc oxide-based homogeneous structure and a manufacturing method. The invention discloses a transparent sandwich structure RRAM component and a manufacturing method thereof, belonging to the field of transparent electronic devices. Background technique [0002] In recent years, due to its simple structure and excellent compatibility with modern semiconductor CMOS processes, RRAM has gradually become a research hotspot for the new generation of non-volatile memory. In the research process of RRAM materials, people have gradually discovered that a variety of material systems have application potential as RRAM. It mainly includes: rare earth manganese oxide materials, transition metal perovskite structure materials, binary transition metal oxide materials, organic polymer semiconductor materials and some sulfide materials. At present, the research on binary tr...

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Problems solved by technology

In terms of research on transparent RRAM memory cells, so far, zinc oxide-based homogeneous structure RRAM memory cells have rarely been reported in various literatures at home and abroad.

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