Method for preparing selenide or sulfide semiconductor film material of copper-indium-gallium

Abstract

The invention refers to a manufacturing method for selenide or sulfide of copper, indium or gallium. In the manufacturing process of copper, indium or gallium selenide and / or sulphur optical absorbing layer film, uses vacuum magnetism control splattering, heating and evaporating method or chemical water bath electrodeposition method to deposit a metal preprocessed layer with chemical formula proportion of Cu, In, Ga on the natrium calcium glass Mo substrate, then carries on optical selenide or / and sulfide reaction in the thermal process vacuum room, the character lies in: the battery base board deposited with the preprocessed layer are heated upon the two surfaces, the back surface of the base board is heated with contacting heat reservoir, the surface coated with metal preprocessed layer is heated with light irradiation, when the temperature rises to the 400-560oC evenly and quickly, carries on the cooperative heating with contacting heat reservoir and light irradiation to the selenium source or the sulphur source, makes the metal preprocessed layer converted into the compound semiconductor photoelectric film material.

Description

technical field [0001] The technical solution claimed in the present invention relates to the post-treatment method after coating the coating with vacuum magnetron sputtering, heating evaporation or chemical water bath electrodeposition on the substrate material, specifically, it is used on metal or insulator substrates A method for preparing copper indium gallium selenium or / and sulfide semiconductor optoelectronic thin film materials by vacuum magnetron sputtering, heating evaporation or chemical water bath electrodeposition method after plating copper indium gallium thin film prefabricated layer and / or sulfidation. Background technique [0002] copper indium selenide (CuInSe 2 Abbreviated as: CIS) series solar cells are one of the most efficient and promising thin-film solar cells among various thin-film solar cells, and its composition includes: CuInSe 2 、Cu(In,Ga)Se 2 、CuInS 2 , CuIn(S, Se) 2 、Cu(In,Ga)S 2 etc., copper indium gallium selenide (Cu(In, Ga)Se 2 Abbre...

AI Technical Summary

Problems solved by technology

The disadvantages of the conventional solid source selenization or vulcanization process are: (1) when the solid selenium source is heated in a vacuum chamber to generate saturated selenium vapor, most of the gaseous selenium is converted to Se 5 、Se 6 、Se 7 exist in the form of macromolecular groups or atomic clusters, and H 2 Se is thermally decomposed into single atom Se and Cu, In, Ga metal atom reaction situation compares, the condition of the reaction process of macromolecular group selenium or atomic cluster selenium is harsher and complicated; (2) promote macromolecular group selenium or atomic cluster The post-selenization temperature of the stepwise reaction of selenium with Cu, In, and Ga metal atoms is very high, almost reaching the softening point of the substrate material glass; (3) when the post-selenization temperature is between 300 and 450°C, the reaction between selenium and metal indium gallium Generated In 2 Se, Ga 2 The Se binary compound is easy to sublimate, causing the loss of In and Ga atoms in the metal prefabricated layer, the element ratio of the prepared CIGS thin film material is out of balance, and the photoelectric performance is greatly reduced; (4) In order to minimize the loss of In and Ga metal atoms, Generally, the temperature range of 300-450°C is passed by rapidly increasing the substrate temperature. In this way, during the rapid heating process of the glass substrate, it is easy to cause a large temperature difference between the two sides, and the battery substrate is easy to warp and deform. It is difficult to implement the follow-up process. The glass substrate is more fragile, and the waste rate of industrial production is high

However, ordinary domestic soda-lime glass will start to soften and deform when it is above 550°C, which will bring difficulties to the subsequent production process and is not conducive to reducing the manufacturing cost of batteries