Method for regulating and controlling built electric field in active region of deep ultraviolet light emitting diode

Abstract

The invention relates to a method for regulating and controlling an electric field built in an active region of a deep ultraviolet light-emitting diode, which belongs to the technical field of semiconductor photodiodes and sequentially comprises a substrate, a buffer layer, an n-type semiconductor electron injection layer, a multi-quantum well active layer, a p-type electron barrier layer, a p-type semiconductor hole injection layer, a p-type contact layer, a p-type electrode and an n-type electrode from bottom to top. The multi-quantum-well active layer comprises a plurality of units growing periodically, each unit comprises a quantum well and quantum barriers on the upper side and the lower side of the quantum well, Mg doping is carried out on the side, close to the quantum well, of the quantum barrier on the upper side of the quantum well, Si doping is carried out on the side, close to the quantum well, of the quantum barrier on the lower side of the quantum well, each quantum barrier is not fully doped, and Si doping is carried out on the side. The built-in electric field of the DUV LED is regulated and controlled through a selective doping method, the problems of wavelength red shift and efficiency attenuation caused by the overlarge built-in electric field are solved, meanwhile, electron and hole injection of the DUV LED is regulated and controlled, and the photoelectric property of the DUV LED is improved by inhibiting electron leakage and enhancing hole injection.

Description

technical field [0001] The invention relates to a method for regulating and controlling an electric field built in an active region of a deep ultraviolet light emitting diode, and belongs to the technical field of semiconductor photodiodes. Background technique [0002] AlGaN material is a wide-bandgap direct bandgap semiconductor with adjustable band gap in the range of 3.4eV~6.2eV. The corresponding emission wavelength range can be changed from 365nm to 200nm. It is the most suitable material for the preparation of deep ultraviolet light-emitting diodes. . Compared with traditional UV pump lamps, AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) have the advantages of less environmental hazard, low operating voltage, low energy consumption, and long service life. And DUV LED has great application value and broad market space in high-density optical storage, sterilization, air and water purification, biochemical experiments, anti-counterfeiting detection, displ...

AI Technical Summary

Problems solved by technology

However, the research of the present invention is based on InGaN-based quantum wells. For deep ultraviolet light-emitting diodes, due to the strong electron injection ability, the PN double doping close together will cause the effective barrier height of electrons to be affected, thereby Easier to leak into the P-type zone

At the same time, the weakened electric field in the quantum barrier cannot be efficiently applied to the quantum well, and the quantum well is the main area where electrons and holes recombine

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