Gallium nitride-based light-emitting diode epitaxial wafer and manufacturing method thereof

Abstract

The invention discloses a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof, belonging to the technical field of semiconductors. The gallium nitride-based light-emitting diode epitaxial wafer includes an insertion layer arranged between the multi-quantum well layer and the electron blocking layer, and the insertion layer includes a plurality of periodic superlattice structures, and each superlattice Each structure includes a first sublayer and a second sublayer disposed on the first sublayer, the first sublayer is a BInN layer, and the second sublayer is a BAlN layer. By setting the insertion layer, the phenomenon of downward bending of the energy band of the electron blocking layer caused by lattice mismatch between the last GaN barrier layer and the electron blocking layer of the multi-quantum well layer can be improved, and the radiative recombination rate of electrons and holes can be improved. Ultimately improve the luminous efficiency of LED.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlights, etc. [0003] The epitaxial wafer is the main component of the LED. The existing GaN-based LED epitaxial wafer includes a substrate, a low-temperature buffer layer, a three-dimensional nucleation layer, a two-dimensional recovery layer, and an undoped GaN layer stacked on the substrate in sequence. , N-type layer, multi-quantum well layer, electron blocking layer, and P-type layer, wherein the multi-quantum well ...

AI Technical Summary

Problems solved by technology

[0005] There is a polarization effect between the last GaN barrier layer of the multi-quantum well layer and the P-type AlGaN electron blocking layer due to lattice mismatch, which causes the energy band of the electron blocking layer to bend downward, reducing the blocking effect of the electron blocking layer on electrons

Electrons have a small effective mass and high mobility, so electrons can easily cross the barrier formed by the electron blocking layer, reach the P-type layer and undergo non-radiative recombination with holes, and the luminous efficiency of the LED is reduced.

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