si substrate led epitaxial wafer and preparation method thereof

Abstract

The invention discloses an Si-substrate LED epitaxial wafer and a preparation method therefor, and relates to the technical fields of a device with a special crystal structure and a preparation method for the device. The epitaxial wafer comprises an Si substrate and an epitaxial layer positioned on the surface of the Si substrate; and the epitaxial layer comprises an AlN / AlGaN buffer layer, an non-intentional-doped U-shaped GaN layer, an Si-doped N type GaN layer, an InGaN / Gan multiple-quantum well luminous layer, an electronic battier layer and an Mg-doped P type GaN layer from the bottom up in sequence. According to the epitaxial wafer, the internal quantum efficiency is improved, the piezoelectric polarization electric field is reduced and the wave function alternation of electrons and holes is increased, so that the radiation recombination probability is improved, and the internal quantum efficiency is further improved.

Description

technical field [0001] The invention relates to the technical field of a device with a special crystal structure and a preparation method thereof, in particular to a Si substrate LED epitaxial wafer and a preparation method thereof. Background technique [0002] LED is a solid-state semiconductor device that directly converts electrical energy into light energy. Compared with traditional light sources, LED has the characteristics of small size, long service life, fast response speed, and high luminous efficiency. Therefore, LED has become a new type of high-profile Green light sources have entered the field of lighting. Among them, LEDs on Si substrates have attracted widespread attention because of their low cost. However, the lattice mismatch and thermal mismatch between the Si substrate and GaN are large, resulting in a large stress between the InGaN / GaN multiple quantum well regional well barriers, and an increase in the piezoelectric polarization effect, resulting in a...

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Problems solved by technology

However, the lattice mismatch and thermal mismatch between the Si substrate and GaN are relatively large, resulting in a large stress between the InGaN / GaN multiple quantum well regional well barriers, an increase in the piezoelectric polarization effect, and a low internal quantum efficiency, which restricts the Development of LED on Si substrate in the field of general lighting

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