GaN-based LED epitaxial structure capable of improving carrier injection efficiency, and growth method thereof

An epitaxial structure and growth method technology, applied in the field of LED design and application, can solve problems such as electron leakage efficiency, energy band distortion of the light-emitting layer, and limiting the luminous efficiency of GaN-based LEDs, so as to improve chip quality, reduce lattice defects and larger The effect of stress

Active Publication Date: 2021-03-02
YANGZHOU UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0002] GaN-based LED is currently one of the main light sources for forming white light. It has the advantages of long life and low energy consumption. However, with the requirements of the working environment, GaN-based LEDs are increasingly required to work under high current. The result is that GaN-based LEDs have a large efficiency attenuation under high current
In the current research, electron leakage is an important reason for the efficiency decay, which is due to the higher effective mass of holes relative to electrons, so that the hole injection from the p-type layer to the active region is more than the electron injection from the n-type layer. The injection efficiency is much lower, so a large number of carriers accumulate in the last quantum well near the p-type layer, causing most of the electrons to leak to the p-type layer.
[0003] In this regard, the current GaN-based LED epitaxial growth method uses the method of growing an AlGaN electron blocking layer to effectively increase the height of the effective barrier of the p-side energy band of the light-emitting layer,

Method used

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  • GaN-based LED epitaxial structure capable of improving carrier injection efficiency, and growth method thereof
  • GaN-based LED epitaxial structure capable of improving carrier injection efficiency, and growth method thereof
  • GaN-based LED epitaxial structure capable of improving carrier injection efficiency, and growth method thereof

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Experimental program
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Effect test

Embodiment 1

[0039] For the light-emitting layer in the epitaxial structure of this embodiment, see Figure 5 , growth method see Figure 4 . The specific growth method is as follows:

[0040] Step 101, processing the substrate:

[0041] In a hydrogen atmosphere, the sapphire substrate was annealed at a temperature of 1100 °C to clean the surface of the substrate.

[0042] Step 102, growing a low-temperature nucleation layer GaN:

[0043] At 550°C, the reaction chamber pressure is 500 Torr, ammonia gas and TMGa are fed in, and a low-temperature nucleation layer GaN with a thickness of 30nm is grown on the sapphire substrate.

[0044] Step 103, growing a non-doped n-GaN layer:

[0045] At 1100°C, keep the pressure of the reaction chamber at 500Torr, inject ammonia gas and TMGa, and continuously grow a non-doped u-GaN layer with a thickness of 2μm.

[0046] Step 104, growing a Si-doped n-GaN layer:

[0047] At 1100°C, keep the reaction chamber pressure at 500 Torr, and feed ammonia, T...

Embodiment 2

[0060] The specific growth method is as follows:

[0061] Step 201, processing the substrate:

[0062] In a hydrogen atmosphere, the sapphire substrate was annealed at a temperature of 1100 °C to clean the surface of the substrate.

[0063] Step 202, growing a low-temperature nucleation layer GaN:

[0064] At 550°C, the reaction chamber pressure is 500 Torr, ammonia gas and TMGa are fed in, and a low-temperature nucleation layer GaN with a thickness of 30nm is grown on the sapphire substrate.

[0065] Step 203, growing a non-doped n-GaN layer:

[0066] At 1100°C, keep the pressure of the reaction chamber at 500Torr, inject ammonia gas and TMGa, and continuously grow a non-doped u-GaN layer with a thickness of 2μm.

[0067] Step 204, growing a Si-doped n-GaN layer:

[0068] At 1100°C, keep the reaction chamber pressure at 500 Torr, and feed ammonia, TMGa and SiH 4 , continue to grow a layer of n-GaN layer doped with Si with a thickness of 3 μm and a stable doping concentra...

Embodiment 3

[0082] This embodiment adopts the traditional GaN-based LED epitaxial growth method, as follows:

[0083] Step 301, processing the substrate:

[0084] In a hydrogen atmosphere, the sapphire substrate was annealed at a temperature of 1100 °C to clean the surface of the substrate.

[0085] Step 302, growing a low-temperature nucleation layer GaN:

[0086] At 550°C, the reaction chamber pressure is 500 Torr, ammonia gas and TMGa are fed in, and a low-temperature nucleation layer GaN with a thickness of 30nm is grown on the sapphire substrate.

[0087] Step 303, growing a non-doped n-GaN layer:

[0088] At 1100°C, keep the pressure of the reaction chamber at 500Torr, inject ammonia gas and TMGa, and continuously grow a non-doped u-GaN layer with a thickness of 2μm.

[0089] Step 304, growing a Si-doped n-GaN layer:

[0090] At 1100°C, keep the reaction chamber pressure at 500 Torr, and feed ammonia, TMGa and SiH 4 , continue to grow a layer of n-GaN layer doped with Si with a...

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Abstract

The invention discloses a GaN-based LED epitaxial structure capable of improving the carrier injection efficiency, and a growth method thereof. A light-emitting layer is formed by barrier layers and quantum well layers alternately, the last barrier layer adopts an Al component, namely an AlxGa1-xN barrier layer with x value gradually changing from 0 to 0.15, other barrier layers are GaN barrier layers, a sub-well layer adopts an InyGa1-yN quantum well layer, and y is 0.1 to 0.3. According to the invention, the growth of the AlGaN electron barrier layer is removed, the improvement of a hole barrier caused by p-type Mg doped AlGaN can be reduced, the serious lattice defect and large stress caused by the growth of the AlGaN and the high-temperature damage of the high-temperature growth condition of the AlGaN to a light-emitting layer structure are reduced, the chip quality is improved, and the AlxGa1-xN barrier layer with gradually changed Al components is adopted, the effect of effectively improving the electron potential barrier can still be achieved, meanwhile, the hole potential barrier can be effectively reduced, electron leakage is restrained, and the hole injection capacity isfurther improved, so the effective radiation recombination rate in the light-emitting layer is increased, and the light-emitting efficiency of the GaN-based LED is improved.

Description

technical field [0001] The invention relates to the field of LED design and application, in particular to an LED epitaxial layer structure and a growth method thereof with improved hole injection layer and light emitting layer structures. Background technique [0002] GaN-based LED is currently one of the main light sources for forming white light. It has the advantages of long life and low energy consumption. However, with the requirements of the working environment, GaN-based LEDs are increasingly required to work under high current. The result is that GaN-based LEDs have a large efficiency attenuation under high current. In the current research, electron leakage is an important reason for the efficiency decay, which is due to the higher effective mass of holes relative to electrons, so that the hole injection from the p-type layer to the active region is more than the electron injection from the n-type layer. The injection efficiency is much lower, so a large number of c...

Claims

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Application Information

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IPC IPC(8): H01L33/32H01L33/06H01L33/12H01L33/14H01L33/00B82Y40/00
CPCH01L33/06H01L33/325H01L33/12H01L33/14H01L33/007B82Y40/00
Inventor 程立文李侦伟林星宇曾祥华杨达
Owner YANGZHOU UNIV
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