Wet texturing method for inverted pyramid structure of crystalline silicon
An inverted pyramid and crystalline silicon technology, applied in crystal growth, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve problems affecting photoelectric conversion efficiency, large inverted pyramid size, large carrier recombination, etc., to achieve improved The effect of photoelectric conversion efficiency, high shape density, and smooth microscopic surface
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Embodiment 1
[0018] Put the cleaned single crystal silicon wafer into a polytetrafluoroethylene container containing a mixed solution of 0.5mol / L sodium silicate and 10mol / L hydrofluoric acid for 120 minutes at 80°C, and then etch the silicon wafer with Deionized water wash.
Embodiment 2
[0020] Put the cleaned single crystal silicon wafer into a polytetrafluoroethylene container containing a mixed solution of 0.55mol / L sodium silicate and 10mol / L hydrofluoric acid for 120 minutes at 80°C, and then use the etched silicon wafer with Deionized water wash.
Embodiment 3
[0022] Put the cleaned single crystal silicon wafer into a polytetrafluoroethylene container containing a mixed solution of 0.6mol / L sodium silicate and 10mol / L hydrofluoric acid for 120 minutes at 80°C, and then use the etched silicon wafer with Deionized water wash.
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