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Hexagonal boron nitride deep ultraviolet photoelectric detector with embedded MSM structure and preparation method thereof

A technology of hexagonal boron nitride and deep ultraviolet light, which is applied in the field of hexagonal boron nitride deep ultraviolet photodetectors and its preparation, can solve the problems of unsatisfactory practical application, low responsivity and detection sensitivity of hexagonal boron nitride detectors , to prevent shedding and contamination, ensure stability, improve responsiveness and response speed

Pending Publication Date: 2022-06-24
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, limited by the crystal quality and device structure of hexagonal boron nitride, the responsivity and detection sensitivity of hexagonal boron nitride detectors are low, which cannot meet the practical application

Method used

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  • Hexagonal boron nitride deep ultraviolet photoelectric detector with embedded MSM structure and preparation method thereof
  • Hexagonal boron nitride deep ultraviolet photoelectric detector with embedded MSM structure and preparation method thereof
  • Hexagonal boron nitride deep ultraviolet photoelectric detector with embedded MSM structure and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0025] (1) successively the c-plane sapphire substrate 1 was cleaned by ultrasonic waves for 10 min each by acetone, ethanol and deionized water, and finally the c-plane sapphire substrate 1 was blown dry with a nitrogen gun for subsequent use;

[0026] (2) Put the c-plane sapphire substrate 1 into the chamber of the low pressure chemical vapor deposition equipment, pass nitrogen, boron trichloride and ammonia gas, the flow ratio is 200sccm:10sccm:30sccm, and grow at 1350°C for 20min , a hexagonal boron nitride layer 2 with a thickness of 400 nm is obtained on the surface of the c-plane sapphire substrate 1;

[0027] (3) In-situ annealing at 1650°C for 10min;

[0028] (4) Uniformly coat a layer of photoresist on the surface of the sample treated in step (3), and then perform photolithography treatment: the photoresist model is BP 212-37S, and the photolithography process includes uniform glue: low rotation speed 500rpm, High speed 4500rpm; pre-bake: remove solvent after 90℃ h...

Embodiment 2

[0034] (1) successively cleaning the c-plane sapphire substrate 1 by ultrasonic cleaning of acetone, ethanol and deionized water for 10min, and drying the c-plane sapphire substrate 1 with a nitrogen gun for subsequent use;

[0035] (2) Put the c-axis sapphire substrate 1 into the magnetron sputtering apparatus, and evacuate to a background vacuum of 5×10 -3Pa, at a temperature of 600°C, argon and nitrogen gas were introduced, and the flow ratio was 50sccm:50sccm, and the hexagonal boron nitride target was sputtered, and the sputtering time was 40 min to form a 400 nm thick hexagonal boron nitride layer 2.

[0036] (3) Uniformly coat a layer of photoresist on the surface of the device treated in step (3) and then carry out photolithography processing: the photoresist model is BP 212-37S of Beijing Kehua Company, and the photolithography process includes uniform glue: Low speed 500rpm, high speed 4500rpm; Pre-baking: 90°C hot plate baking for 20min to remove solvent; Exposure: ...

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Abstract

The invention discloses a hexagonal boron nitride deep ultraviolet photoelectric detector with an embedded MSM structure and a preparation method thereof, and belongs to the technical field of semiconductor photoelectric detection. The hexagonal boron nitride deep ultraviolet photoelectric detector is composed of a c-axis sapphire substrate layer, a hexagonal boron nitride layer, an embedded MSM electrode structure layer and a hexagonal boron nitride cladding from bottom to top, and the embedded MSM electrode structure layer is of an interdigital electrode structure. The MSM electrode is embedded in the hexagonal boron nitride layer, and the hexagonal boron nitride cladding covers the electrode, so that the exposure area is increased equivalently, and the collection range of photon-generated carriers can be increased to the greatest extent; the carrier mobility in the hexagonal boron nitride layer is far higher than the interlayer mobility, so that the embedded MSM structure is beneficial to improving the responsivity and the response speed of the device; and meanwhile, the electrodes are embedded in the hexagonal boron nitride film, so that the electrodes can be prevented from falling off and being stained, and the stability of the device is ensured.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photoelectric detection, in particular to a hexagonal boron nitride deep-ultraviolet photodetector with an embedded MSM structure and a preparation method thereof. Background technique [0002] With the relative maturity of infrared detection technology, ultraviolet detection technology has also received more and more attention. Ultraviolet light detectors have a wide range of applications in the fields of solar ultraviolet monitoring, ultraviolet astronomy, secure space communication, and missile guidance and early warning. Especially in recent years, as the civil and military industries have put forward new requirements for ultraviolet photodetectors that can work in high temperature and harsh environments, ultraviolet photodetectors have attracted great attention. Among the existing ultraviolet detectors, there are not many types of detectors working in the deep ultraviolet band. Hexago...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/108H01L31/0224H01L31/18
CPCH01L31/1085H01L31/022408H01L31/18
Inventor 孙浩航陈占国刘晓航张文博陈曦赵纪红侯丽新刘秀环高延军
Owner JILIN UNIV
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