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Copper indium tin selenide/zinc selenide core-shell quantum dot and preparation method and application thereof

A core-shell quantum dot, copper indium tin technology, applied in chemical instruments and methods, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of poor working durability, high dark current, and high heavy metals, and solve the problem of high cost , the effect of improving the generation ability

Pending Publication Date: 2022-06-07
YANGTZE DELTA REGION INST OF UNIV OF ELECTRONICS SCI & TECH OF CHINE HUZHOU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the above-mentioned prior art, the present invention provides a copper indium tin selenide / zinc selenide core-shell quantum dot and its preparation method and application, so as to solve the problems of heavy metal highly toxic components, surface defects / Trap state, complex preparation process, high cost, poor working durability, high dark current, etc.

Method used

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  • Copper indium tin selenide/zinc selenide core-shell quantum dot and preparation method and application thereof
  • Copper indium tin selenide/zinc selenide core-shell quantum dot and preparation method and application thereof
  • Copper indium tin selenide/zinc selenide core-shell quantum dot and preparation method and application thereof

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Embodiment 1

[0027] A copper indium tin selenium / zinc selenide core-shell quantum dot material, the preparation method of which comprises the following steps:

[0028] (1) 0.2mmol copper iodide, 0.2mmol indium acetate, 0.04mmol tin dichloride mixed with 2ml of oleylamine, 2ml of octadecene sulfur mixed into a three-neck flask, heated to 120 °C under a nitrogen atmosphere, and insulation for 10min, and then heated to 190 °C, injected selenium precursor solution, and insulation for 10min, and finally injected 10ml of hexane for reaction quenching, to obtain copper indium tin selenium quantum dots; Among them, the preparation method of selenium precursor solution is: 0.3mmol elemental selenium powder, 0.5ml of oleylamine and 0.3ml of diphenylphosphine mixed, ultrasonic dispersion, that is, to obtain;

[0029] (2) After mixing 0.75mmol of zinc stearate and 5ml of n-octadecene, sonically disperse to dissolve to obtain zinc precursor solution; after mixing 0.6mmol of elemental selenium powder and ...

Embodiment 2

[0033] A copper indium tin selenium / zinc selenide core-shell quantum dot material, the preparation method of which comprises the following steps:

[0034](1) 0.2mmol copper iodide, 0.2mmol indium acetate, 0.04mmol tin dichloride mixed with 2ml of oleylamine, 2ml of octadecene sulfur mixed into the three-neck flask, heated to 110 °C under a nitrogen atmosphere, and insulation for 30min, and then heated to 180 °C, injected into selenium precursor solution, and insulation for 8min, and finally injected 10ml of n-hexane for reaction quenching, to obtain copper indium tin selenium quantum dots; Among them, the preparation method of selenium precursor solution is: 0.3mmol elemental selenium powder, 0.5ml of oleylamine and 0.3ml of diphenylphosphine mixed, ultrasonic dispersion, that is, to obtain;

[0035] (2) After mixing 0.75mmol of zinc stearate and 5ml of n-octadecene, sonically disperse to dissolve to obtain zinc precursor solution; after mixing 0.6mmol of elemental selenium powd...

Embodiment 3

[0039] A copper indium tin selenium / zinc selenide core-shell quantum dot material, the preparation method of which comprises the following steps:

[0040] (1) 0.2mmol copper iodide, 0.2mmol indium acetate, 0.04mmol tin dichloride mixed with 2ml of oleylamine, 2ml of octadecene sulfur mixed into the three-neck flask, heated to 100 °C under a nitrogen atmosphere, and kept warm for 60min, then heated to 170 °C, injected selenium precursor solution, and insulation for 12min, and finally injected 10ml of n-hexane for reaction quenching to obtain copper indium tin selenium quantum dots; Among them, the preparation method of selenium precursor solution is: 0.3mmol elemental selenium powder, 0.5ml of oleylamine and 0.3ml of diphenylphosphine mixed, ultrasonic dispersion, that is, to obtain;

[0041](2) After mixing 0.75mmol of zinc stearate and 5ml of n-octadecene, sonically disperse to dissolve to obtain zinc precursor solution; after mixing 0.6mmol of elemental selenium powder and 4ml...

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Abstract

The invention discloses a copper indium tin selenium / zinc selenide core-shell quantum dot and a preparation method and application thereof.The preparation method comprises the following steps that cuprous iodide, indium acetate, stannous chloride, oleylamine and n-octadecene are mixed and then subjected to heat preservation at the temperature of 100-120 DEG C in the inert gas atmosphere, then a selenium precursor solution is injected at the temperature of 170-190 DEG C, heat preservation is conducted, then quenching and purification are conducted, and the copper indium tin selenium / zinc selenide core-shell quantum dot is obtained. Dissolving in n-octadecene and oleylamine to obtain a copper indium tin selenium quantum dot solution; the copper indium tin selenium quantum dot solution is subjected to heat preservation at 140-160 DEG C in the inert gas atmosphere, then the zinc precursor solution is injected dropwise, then the selenium precursor solution is injected dropwise, the temperature is increased to 210-230 DEG C, heat preservation is conducted for 25-35 min, then quenching is conducted, and the copper indium tin selenium quantum dot is obtained. The copper indium tin selenide / zinc selenide core-shell quantum dot material disclosed by the invention has good light absorption capacity in a near-infrared band and has good photon-generated carrier generation capacity.

Description

Technical field [0001] The present invention belongs to the field of optoelectronic materials and detection technology, specifically relates to a copper indium tin selenium / zinc selenide core shell quantum dots and preparation methods and applications thereof. Background [0002] Photodetector is a kind of optoelectronic device that can convert optical signals into electrical signals, and has been widely used in industrial detection, security monitoring, medical, transportation and other fields. With the further development of detection technology, the market will undoubtedly shift more from military to civilian, such as unmanned vehicles, portable / handheld diagnostic systems and other fields, further accelerating market growth. At present, the mainstream photodetectors are based on III-VI semiconductor materials, and are generally prepared by single crystal growth or molecular beam epitaxy, which has high process cost, complex device assembly, cannot meet large-scale preparati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88C09K11/02H01L31/0328H01L31/0352B82Y20/00B82Y40/00
CPCC09K11/883C09K11/02H01L31/0328H01L31/035218B82Y20/00B82Y40/00Y02P70/50
Inventor 张逸轩童鑫王志明王瑞周楠李鑫
Owner YANGTZE DELTA REGION INST OF UNIV OF ELECTRONICS SCI & TECH OF CHINE HUZHOU
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