IGBT (Insulated Gate Bipolar Translator) chip with novel structure and preparation method

Abstract

The invention relates to an IGBT (Insulated Gate Bipolar Translator) chip with a novel structure and a preparation method. The IGBT chip with the novel structure comprises a plurality of cellular structures, each single cellular structure sequentially comprises a chip surface area, a chip internal area and a chip back area from top to bottom; wherein the chip surface region comprises an emitter region and an oxide layer; the internal region of the chip comprises a polycrystalline silicon layer, a gate oxide layer, an N + emitter region, a P + region, a P base region, a P floating region, an N-drift region and an N-buffer region. The chip back area comprises a P + collector and a back metal electrode; a single cellular structure is an axisymmetric structure; and a plurality of shunting holes which are arranged at equal intervals are etched in the central area of the oxide layer. According to the invention, a plurality of shunt holes arranged at equal intervals are etched in the central area of the oxide layer, a hole channel is provided above the P floating region, hole carriers are prevented from gathering in the P floating region, and the short-circuit capability of the IGBT is improved under the condition of ensuring the stability of breakdown voltage.

Description

technical field [0001] The invention relates to the technical field of high-power IGBTs, in particular to an IGBT chip with a novel structure and a preparation method. Background technique [0002] Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor, IGBT) has both power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, Metal-Oxide-Semiconductor Field-Effect Transistor) easy to drive, simple control, high switching frequency and power dual Bipolar Junction Transistor (BJT) has the advantages of low saturation voltage drop, large current transport capability and low loss, and has significant advantages in technology and efficiency. The growth of the renewable energy sector such as solar and wind power has led to the need for high-power IGBTs. The motors used in wind turbines are of the variable-speed type, and high-power IGBTs are required to improve efficiency. Applications in electric vehicles (Electric Vehicle, EV) and hybrid electric vehicles (H...

AI Technical Summary

Problems solved by technology

[0004] There are still some serious problems in the existing IEGT, for example, due to the presence of lateral current in the large-area P floating region, the current density under the N+ emitter region increases, which reduces the latch-up capability and the short-circuit capability; or due to the large-area P floating area, resulting in a decrease in breakdown capability and a decrease in breakdown voltage

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