Tunneling photodiode suitable for high-energy photon detection and preparation method thereof

Abstract

The invention discloses a tunneling photodiode suitable for high-energy photon detection and a preparation method of the tunneling photodiode, and the tunneling photodiode adopts an intrinsic perovskite crystal with very high thickness as a high-energy photon absorber to obtain relatively high photon absorption and conversion efficiency. A perovskite P-type layer and a perovskite N-type layer respectively grow at two ends of an intrinsic perovskite crystal by using a solution doping epitaxy method to form a perovskite PIN junction, and a junction region depletion layer potential barrier is used for inhibiting dark current and noise. And narrow-band-gap quantum dots are epitaxially grown in the junction region to form an energy band trap. When high-energy photons are incident, photon-generated carriers generated by the perovskite intrinsic absorber are injected into the quantum dot energy level trap, tunneling field emission occurs, and high-gain light current is obtained. Compared with a conventional high-energy photon PIN detection structure, due to the introduction of the tunneling field emission structure, high photocurrent gain can be obtained. Compared with a high-energy photon avalanche diode detection structure, since no random avalanche effect is generated, shot noise is relatively low.

Description

technical field [0001] The invention relates to the field of high-energy photon detection and imaging, in particular to a tunneling photodiode suitable for high-energy photon detection and a preparation method thereof. Background technique [0002] The detection of high-energy photons such as X-rays and γ-rays has important applications in the fields of nuclear medicine, aerospace, and industrial non-destructive testing. People have been working hard to develop high-performance high-energy photon detectors. Since high-energy photons such as X-rays and γ-rays have high energy and strong penetrating ability, the photocurrent obtained in the process of high-energy photon detection is often much smaller than that obtained by visible light detection. Reducing the detection noise of high-energy photons and increasing the photocurrent amplitude are the goals that people have been working on. [0003] In X-ray and γ-ray detection, people usually use PIN diode detection structure. ...

AI Technical Summary

Problems solved by technology

Since quantum dots can only absorb photons with lower energy, the above-mentioned quantum dot / perovskite field emission tunneling diode can only be used for near-infrared and visible light detection.

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