Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Multi-cavity chemical vapor deposition equipment

A chemical vapor deposition, multi-cavity technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of hot wire service life, high cost, poor quality, etc., to save Hardware investment cost and operating cost, avoid cross-contamination, improve the effect of service life

Pending Publication Date: 2022-04-29
德州智南针机械科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the equipment of the mainstream equipment manufacturers in the market usually only has one reaction chamber, which cannot carry out multiple processes at the same time. When depositing films of different layers and sizes, the composition and flow rate of the gas phase are different, and the required temperature is also different. , so that when one process is completed and another process is carried out, it takes a long time to change the reaction conditions, resulting in higher costs, and also causing defects, resulting in quality problems
For example, during the deposition of diamond film materials, the required working temperature ranges from 1600 degrees Celsius to 2400 degrees Celsius, the reaction pressure is between 5-100 mbar, and the gas phase of the reaction is formed differently in hydrogen, methane, diborane, oxygen, and nitrogen. The arrangement and combination are suitable for different forms of membranes. In addition, the service life of the heating wire is greatly affected by the process and gas phase adjustment, which will result in relatively poor quality and high operating costs. The equipment cavity is only suitable for one kind of placement. Moreover, under the same reaction conditions, the output of a single chamber is too low to meet large-scale industrial production and market demand; the application scenarios of single chamber equipment are often limited, and equipment for placing substrates horizontally cannot be used for vertically placing substrates. In view of this, in-depth research on the above-mentioned issues led to this case

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multi-cavity chemical vapor deposition equipment
  • Multi-cavity chemical vapor deposition equipment
  • Multi-cavity chemical vapor deposition equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] The present invention is specifically described below in conjunction with accompanying drawing, as Figure 1-5 Shown, a multi-chamber chemical vapor deposition equipment.

[0037] All the electrical components in this case are connected with their corresponding power supply through wires by personnel in the field, and the appropriate controller should be selected according to the actual situation to meet the control requirements. The specific connection and control sequence should refer to the following working principle Among them, the electrical connections between the electrical components are completed sequentially, and the detailed connection methods are well known in the art. The following mainly introduces the working principle and process, and does not explain the electrical control.

[0038] A multi-box 1 chemical vapor deposition equipment, including a box 1, a gas supply structure is arranged on the box 1, the inside of the box 1 is divided into multiple cavi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a multi-cavity chemical vapor deposition device which comprises a box body, a gas supply structure is arranged on the box body, the interior of the box body is divided into a plurality of cavities through a plurality of separation structures, a plurality of heating structures are arranged in the box body, a plurality of lifting structures are arranged in the box body, and the lifting structures are arranged in the box body. The device has the beneficial effects that under the condition that the deposition time is long, such as a diamond film and an amorphous silicon film, but not limited to the diamond film and the amorphous silicon film, deposition can be carried out in equipment with three, ten or more cavities at the same time, industrial preparation of film materials is completed in a one-time large-scale mode, and the device is suitable for large-scale production. The hardware investment cost and the operation cost are saved; the deposition process can be carried out in the single cavity according to the process conditions under the complex process conditions and sequence, and the distance between the substrate and the hot wire and the distance between the substrate and the gas distribution system are adjusted through the lifting platform, so that the influence on the product quality caused by side reaction is avoided.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition film equipment, in particular to a multi-cavity chemical vapor deposition equipment. Background technique [0002] A typical chemical vapor deposition process is to expose the substrate to one or more different precursors. Under high temperature, plasma and other reaction conditions, chemical reactions or / and chemical decomposition occur in various gas phases. A deposited film is produced. Compared with the plasma technology, the hot wire method can prepare large-area diamond films with the lowest overall cost, and has good potential for industrial promotion. [0003] At present, the equipment of the mainstream equipment manufacturers in the market usually only has one reaction chamber, which cannot carry out multiple processes at the same time. When depositing films of different layers and sizes, the composition and flow rate of the gas phase are different, and the required tem...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/458C23C16/46C23C16/54
CPCC23C16/455C23C16/54C23C16/458C23C16/46
Inventor 王萍
Owner 德州智南针机械科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products