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Growth method of AlGaN material

A growth method and solution technology, applied in polycrystalline material growth, single crystal growth, single crystal growth, etc., can solve the problems of slow preparation speed and high preparation cost of AlGaN materials, and achieve fast preparation speed, which is conducive to large-scale industrial production The effect of production preparation and preparation cost is low

Pending Publication Date: 2022-04-12
WUHAN RAYCUS FIBER LASER TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The main purpose of this application is to provide a growth method for AlGaN materials to solve the problems of high preparation cost and slow preparation speed of AlGaN materials in the prior art

Method used

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  • Growth method of AlGaN material
  • Growth method of AlGaN material
  • Growth method of AlGaN material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] Provide figure 2 The growth device of the ALGAN material is specifically as follows:

[0063] Step 1: The melting point of 0.99999% of the purity of 99.9999% is provided, and the melting point of Al is 660 ° C, and the melting point of Ga is 29.8 ° C. The crucible made of quartz material was selected, and the metal Al and Ga of the molar volume ratio of 2: 8 were placed in the crucible. The order in which the placement can be paved in a layer of Al powder in the crucible, and then some metal Ga small pieces are placed thereon, and some boron oxide substances are placed around them. After the material is placed, the reaction chamber is closed, and the pressure in the reaction chamber is pumped to the vacuum state, the vacuum is 1 × 10 -6 PA;

[0064] Step 2: Power on the heating coil around the crucible, so that the internal temperature of the crucible is raised to 750 ° C. The Al powder and metal Ga small pieces in the crucible began to melt. At this time, slowly rotate the...

Embodiment 2

[0070] Provide image 3 The growth device of the ALGAN material is specifically as follows:

[0071] Step 1: Provide aluminum (Al) powder and metal gallium (Ga) with a purity of 99.9999%. The crucible made of quartz material was selected, and the metal Al powder and Ga block of 1: 9 were placed in the crucible. The order in which the placement can be paved in a layer of Al powder in the crucible, and then placed some metal Ga small pieces thereon, and then add a little boron oxide in the edge of the crucible (B 2 O 3 . After the material is placed, the reaction chamber is closed, and the air pressure in the reaction chamber is smashed into a vacuum state, the vacuum is 1 × 10 -5 PA;

[0072] Step 2: Power on the heating coil around the crucible to increase the internal temperature of the crucible to 700 ° C. The Al powder and metal Ga small pieces in the crucible began to melt. At this time, slowly rotate the rotary rod at the bottom of the crucible, and the speed of rotation is 5 ...

Embodiment 3

[0078] Provide Figure 4 The growth device of the ALGAN material is specifically as follows:

[0079]Step 1: The melting point of 0.99999% of the purity of 99.9999% is provided, and the melting point of Al is 660 ° C, and the melting point of Ga is 29.8 ° C. The crucible made of quartz material was selected, and the metal Al and Ga of the molar ratio of 3: 7 were placed in the crucible. The order in which the placement can be paved in a layer of Al powder in the crucible, and then some metal Ga small pieces are placed thereon, and some boron oxide substances are placed around them. After the material is placed, the reaction chamber is closed, and the pressure in the reaction chamber is pumped to the vacuum state, the vacuum is 2 × 10 -6 PA;

[0080] Step 2: Power on the heating coil around the crucible, so that the internal temperature of the crucible is raised to 750 ° C. The Al powder and metal Ga small pieces in the crucible began to melt. At this time, slowly rotate the rotary ...

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Abstract

The invention provides a growth method of an AlGaN material. The method comprises the following steps: introducing nitrogen into a reaction chamber containing an AlGa solution; the nitrogen is ionized, so that part of nitrogen ions obtained through ionization is dissolved in the AlGa solution; the AlGaN material is obtained from an AlGa solution in which nitrogen ions are dissolved by adopting a crystal pulling method. Compared with an AlxGa1-xN material prepared through MOCVD, MBE and other methods in the prior art, nitrogen ions generated through nitrogen ionization reaction are dissolved in the AlGa solution to generate the AlGaN material, the method is simple in required condition, low in preparation cost and low in required reaction temperature, the preparation speed of the single AlGaN material is high, the yield is high, and the method is suitable for industrial production. The problems of high preparation cost and low preparation speed of the AlGaN material in the prior art are well solved, and industrial large-scale production and preparation are facilitated.

Description

Technical field [0001] The present application relates to the semiconductor field, and in particular, there is a method of growth of an AlGaN material. Background technique [0002] Al x GA 1-x The N material is a direct co-band semiconductor material, which is continuously adjustable between 6.2 eV to 3.4 eV, and is an ideal material for preparing an ultraviolet light electronic device between 210 nm to 365 nm. Based on Al x GA 1- x N material's rocky ultraviolet detectors have a variety of advantages of intrinsic detection, wavelength, small size, radiation radiation, and low operating capacity, etc. have important application value in many areas. However, different binary nitride epitoxides such as GaN, AlN, Al x GA 1-x The growth of N materials is more difficult, mainly due to the difference in migration characteristics of Al atoms and GA atoms. Based on Al x GA 1-x N material ultraviolet detector performance is far from achieving practical applications, mainly because of la...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/04C30B29/40C30B30/00C30B30/02
Inventor 张怡静陈明王建明闫大鹏
Owner WUHAN RAYCUS FIBER LASER TECHNOLOGY CO LTD
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