Preparation process of hyperspectral photoelectric detector

A technology of photodetector and preparation process, applied in spectrometry/spectrophotometry/monochromator, electric solid device, optical radiation measurement, etc., can solve the problems of low integration and complex system, etc.

Pending Publication Date: 2022-03-25
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The traditional hyperspectral imager consists of two parts: an infrared detector and a traditional optical module. Usually, the system is relatively complex and the integration level is low.

Method used

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  • Preparation process of hyperspectral photoelectric detector

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preparation example Construction

[0026] A preparation process of a hyperspectral photodetector, comprising the following steps:

[0027] S1. Firstly, the quartz glass substrate is cleaned, and then its surface is treated;

[0028] S2. Using electron beam lithography to make a pattern of the grating array on the quartz glass substrate, and then depositing metal and cleaning to obtain the metal grating array of the first layer;

[0029] S3. Deposit a layer of SU8 dielectric material with a thickness of 1.5 μm on the metal grating array by using the spin coating method, and fix the SU8 dielectric layer on the metal grating array of the first layer by ultraviolet exposure and heating, and finally obtain a narrowband beam splitter array ;

[0030] S4. Selecting InP-based InGaAs as the material for preparing the detector array, preparing the detector array and the corresponding readout circuit for flip-chip bonding;

[0031] S5. Chip-integrate the narrowband beam splitter array and the detector array.

[0032] F...

Embodiment 1

[0039] A preparation process of a hyperspectral photodetector, comprising the following steps:

[0040] S1. Firstly, the quartz glass substrate is cleaned, and then its surface is treated;

[0041] S2, using electron beam lithography to make a pattern of the grating array on the quartz glass substrate, and then depositing metal and cleaning to obtain the metal grating array of the first layer;

[0042] S3. Deposit a layer of SU8 dielectric material with a thickness of 1.5 μm on the metal grating array by using the spin coating method, and fix the SU8 dielectric layer on the metal grating array of the first layer by ultraviolet exposure and heating, and finally obtain a narrowband beam splitter array ;

[0043] S4. Selecting InP-based InGaAs as the material for preparing the detector array, preparing the detector array and the corresponding readout circuit for flip-chip bonding;

[0044] S5. Chip-integrate the narrowband beam splitter array and the detector array.

Embodiment 2

[0046] On the basis of Example 1, in the step S5, when the narrow-band beam splitter array and the detector array are patch-integrated, the beam splitter array is arranged in the form of a line array and sequentially arranged into 900-1500nm beam splitter modules, The beam splitter module of each channel corresponds to a detector pixel.

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Abstract

The invention discloses a preparation process of a hyperspectral photoelectric detector, and belongs to the technical field of photoelectric materials and devices, and the preparation process comprises the following steps: S1, firstly cleaning a quartz glass substrate, and then processing the surface of the quartz glass substrate; s2, manufacturing a pattern of a grating array on the quartz glass substrate by using electron beam lithography, and obtaining a first layer of metal grating array through metal deposition and cleaning; s3, depositing a layer of SU8 dielectric material with the thickness of 1.5 microns on the metal grating array by using a spin coating method, and fixing the SU8 dielectric layer on the first layer of metal grating array through ultraviolet exposure and heating to finally obtain a narrow-band optical splitter array; s4, selecting InP-based InGaAs as a detector array preparation material, and preparing the detector array and a reading circuit corresponding to the detector array for flip-chip bonding; and S5, performing patch integration on the narrow-band optical splitter array and the detector array. The preparation method is suitable for the preparation process of the hyperspectral photoelectric detector.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials and devices, and in particular relates to a preparation process of a hyperspectral photodetector. Background technique [0002] Infrared spectroscopy contains extremely rich information. Infrared spectroscopy can be used to distinguish chemical bonds and functional groups of substances. At the same time, in the near-infrared band, different substances also have significantly different absorption and reflection spectra. Near-infrared spectroscopy detection is very important for the screening and detection of substances. It is also extremely important. Spectrometers are usually difficult to prepare, large in size, and expensive. Compared with spectrometers, hyperspectral detectors have the advantages of low cost, high integration, and better spectral resolution. They are an important development direction of spectral detection systems. one. The development of infrared hyperspectral ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/16G01J3/28
CPCH01L25/167G01J3/2803G01J3/2823
Inventor 巫江刘和桩王志明
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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