Method for etching pattern by hard mask and preparation method of refrigeration infrared detector

Abstract

According to the method for etching the pattern by the hard mask and the preparation method of the refrigeration infrared detector provided by the invention, the method for etching the pattern by the hard mask completes the etching of the pattern by the hard mask through a one-time photoetching process and a two-time or three-time etching process, and forms a double-step etching pattern at the same time, thereby reducing the generation of an undercutting phenomenon, and improving the yield of the refrigeration infrared detector. Therefore, the internal stress of the etched side wall is relieved, the conductivity of the step area is improved, the filling defects generated when substances are filled on the step subsequently are reduced, and the yield of the device in the subsequent process and the performance of the device are improved. And the patterned photoresist layer is used as a mask to etch the hard mask layer at the second opening, so that a step-shaped hard mask layer can be formed, and the phenomenon of breakage of the hard mask layer is reduced.

Description

technical field [0001] The invention relates to the technical field of cooling infrared detectors, in particular to a method for etching patterns on a hard mask. Background technique [0002] In the current 1-3 generation semiconductor manufacturing, ICP etching (Inductively Coupled Plasma, inductively coupled plasma etching) or RIE etching (Reactive Ion Etching, reactive ion etching) is an essential process step. In ICP etching or RIE etching, SiO is usually used 2 As a hard coat layer to get good SiO 2 profile. [0003] In recent years, ICP etching or RIE etching, as a common plasma dry etching, can achieve good etching effects when etching materials such as silicon, silicon dioxide, and III-V compounds. Therefore, ICP Etching or RIE etching is widely used in the fabrication process of various optoelectronic devices. At present, people have used this technology to make SiO2 for cooling infrared detectors based on GaSb materials. 2 hard mask etch process. SiO 2 The e...

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Problems solved by technology

[0004] However, in SiO 2 During the etching process of the hard mask, the phenomenon of undercut (undercut) is easy to occur, which affects the normal progress of the subsequent process and reduces the yield and performance of the cooled infrared detector.

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