Cleaning method for semiconductor material

Abstract

The invention relates to a cleaning method for a semiconductor material, which comprises the following specific steps of firstly, immersing the semiconductor material into an alkaline degreasing cleaning solution for degreasing treatment, and washing with deionized water after cleaning, removing metal ions, sequentially soaking and cleaning the semiconductor material with an acid A cleaning solution, and washing with deionized water after cleaning, then soaking and cleaning with neutral cleaning solution, and washing with deionized water after cleaning, and finally, soaking and cleaning in an acidic cleaning solution B, and washing with deionized water after cleaning. According to the cleaning method provided by the invention, the use concentration of strong acid is greatly reduced, and environmental pollution and corrosion to human bodies are reduced. The cleaning solution is good in stability and not prone to decomposition and volatilization, the service life of the cleaning solution is prolonged, corrosion to silicon products is small, and Ra of the washed products cannot be increased.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and relates to a cleaning method for semiconductor materials. Background technique [0002] In the manufacturing process of semiconductor devices such as flat panel displays such as TFT liquid crystals, micro information processors, memories, and CCDs, silicon, silicon oxide (SiO 2 ), glass, etc., on the surface of substrates such as submicron or even 1 / 4 micron for patterning or thin film formation. Therefore, in each of these manufacturing processes, the tiny contamination on the surface of the substrate must also be removed, making the surface of the substrate highly clean has become an extremely important issue; the same equipment consumables also need to be highly clean, and particulate matter is the focus of control in semiconductor engineering Objects, the products used in the project should go through the cleaning process to remove the factors that affect the particulate ...

AI Technical Summary

Problems solved by technology

Soaking and cleaning is carried out in a strong acid mixture, and APM is used to remove particles, some organic matter and some metals on the surface of the silicon wafer, but this solution will increase the roughness of the silicon wafer surface

HPM and DHF are used to remove metal contamination on the surface of silicon wafers, but HPM uses high-concentration strong acid, which is easy to decompose and volatilize. It has poor stability during use, low service life, and rapid failure of solution cleaning ability.

Therefore, the currently used RCA cleaning process needs to use a lot of chemical reagents that are not friendly to the environment. If used in large quantities, the damage to the environment will be serious

And according to the research report, the SC1 solution can effectively remove the particles on the surface of the semiconductor silicon body, but at the same time it brings another source of foreign metal impurities, such as iron, zinc and aluminum, etc.

Although the SC1 solution can basically remove particles with a particle size larger than 0.5 μm on the surface of the silicon body, it increases the deposition of particles with a particle size smaller than 0.5 μm.

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