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Composition for preparing top antireflection film, top antireflection film and fluorine-containing composition

An anti-reflection film and composition technology, which is applied to photosensitive materials for opto-mechanical equipment, opto-mechanical equipment, photo-engraving process of patterned surfaces, etc., can solve problems such as low refractive index, and achieve low cost of raw materials and good Solution stability and film-forming properties, and the effect of improving yield

Active Publication Date: 2022-04-22
GANSU HUALONG SEMICON MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The pH value of the composition for preparing the top anti-reflection film can match the pH value of the photoresist, and has good stability and film-forming property, can be coated with a small amount, and can be prepared with a lower refractive index. High-efficiency top anti-reflection coating, thereby reducing the possible graphics defects in the photolithography process, improving the quality of photolithography graphics, and improving the problem of large differences in the thickness of the center point and edge after coating, and adding to the top anti-reflection layer system An appropriate amount of acid can suppress the H in the photoresist + Diffusion to the anti-reflection film avoids the problem of T-top formation

Method used

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  • Composition for preparing top antireflection film, top antireflection film and fluorine-containing composition
  • Composition for preparing top antireflection film, top antireflection film and fluorine-containing composition
  • Composition for preparing top antireflection film, top antireflection film and fluorine-containing composition

Examples

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Effect test

preparation example Construction

[0057] Preparation of perfluoropolyether carboxylic acid

[0058] (1) First add 50ml of acetonitrile and 50ml of tetraethylene glycol dimethyl ether into a 1L polymerization kettle, then add 5g of catalyst KF into the polymerization kettle, stir and mix evenly, replace with high-purity nitrogen three times, and pump negative pressure to -0.1MPa, lower the temperature to the set temperature of 0°C, feed 50g of hexafluoropropylene oxide, adopt timing feeding (50g / h), control the reaction process, and control the temperature between 0-10°C; add hexafluoropropylene oxide After propane reaches 1000g, return to normal pressure, after the reaction is completed, keep stirring for two hours, stop stirring, return to room temperature, and obtain the mixture;

[0059] (2) The mixture is layered, and the product in the lower layer is centrifuged and filtered to separate the reaction product 1, and the reaction product 1 is added to the distillation device; through rectification and purifi...

Embodiment 1

[0065] The above-mentioned perfluoropolyether carboxylic acids with different degrees of polymerization are mixed, and the mixing ratio is as follows: by weight, 4wt% perfluoropolyether carboxylic acid A, 55wt% perfluoropolyether carboxylic acid B, 38wt% perfluoropolyether carboxylic acid Ether carboxylic acid C, 3wt% perfluoropolyether carboxylic acid D to prepare a perfluoropolyether carboxylic acid composition, the specific composition of which is shown in Table 1.

[0066] Prepare 0.0064 moles of perfluoropolyether carboxylic acid into a 2wt% aqueous solution, and then mix it with 2wt% polyvinylpyrrolidone aqueous solution at a molar ratio of perfluoropolyethercarboxylic acid to polyvinylpyrrolidone of 10:1, and stir until a transparent solution; under stirring condition, add 2wt% tetramethylammonium hydroxide solution in the solution again, the consumption of tetramethylammonium hydroxide is 0.584g; Then, add surfactant isopropanol 1.32g, add ethylene glycol acid 2.0g, ad...

Embodiment 2

[0069]Mix the above-mentioned perfluoropolyether carboxylic acids with different degrees of polymerization, and the mixing ratio is as follows: by weight, 2wt% of perfluoropolyether carboxylic acid A, 40wt% of perfluoropolyether carboxylic acid B, 48wt% of perfluoropolyether carboxylic acid Ether carboxylic acid C, 10wt% perfluoropolyether carboxylic acid D to prepare a perfluoropolyether carboxylic acid composition, the specific composition of which is shown in Table 1.

[0070] A composition solution was obtained in the same manner as in Example 1 except that 1.32 g of the surfactant hexafluoroisopropanol was used instead of isopropanol. By weight, the composition solution consists of 1.74wt% perfluoropolyether carboxylic acid composition, 0.026wt% polyvinylpyrrolidone, 0.21wt% tetramethylammonium hydroxide, 0.475wt% hexafluoro Isopropanol, 0.72wt% oxalic acid, 96.829wt% water.

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Abstract

The invention relates to the technical field of advanced optical materials, in particular to a composition for preparing a top antireflection film for photoresist, a top antireflection film for photoresist and a fluorine-containing composition. The composition for preparing the top anti-reflection film for photoresist comprises: fluorine-containing composition, alkali, acid and surfactant. The fluorine-containing composition includes a fluorine-containing polymer; the fluorine-containing composition includes fluorine-containing polymers respectively containing n=1, 2, 3, 4 and ≥ 5 fluorine-containing polyether groups, and the contents of the above-mentioned fluorine-containing polymers are respectively 0-10wt%, 30wt-68wt%, 32wt-60wt%, 0-15wt% and 0-8wt%; the content of the fluorine-containing composition in the composition for preparing the top antireflection film for photoresist is 1wt-15wt %. The anti-reflective film can avoid light scattering and standing wave effect, and at the same time, the pH of the composition and the photoresist is well matched, which improves the problem of holes and uniformity on the film surface and the large difference in thickness between the center point and the edge after coating, and improves the photolithography performance. Process yield.

Description

technical field [0001] The invention relates to the technical field of advanced optical materials, in particular to a composition for preparing a top antireflection film for photoresist, a top antireflection film for photoresist and a fluorine-containing composition. Background technique [0002] Photolithography technology is a method of transferring the semiconductor circuit pattern on the photomask to the silicon wafer. The photomask template is irradiated by laser or electron beam, so that the photosensitive substance on the wafer changes the material properties due to light sensitivity. , so as to complete the pattern transfer process, the existing photolithography technology has the technical problem of light scattering, resulting in low dimensional accuracy of photoresist imaging. The current mainstream solution is to add a low refractive index and high transmittance fluorine-containing compound top anti-reflective film before and after photoresist coating, which can ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/004G03F7/09
CPCG03F7/004G03F7/091C08L71/02C08L101/00C08L39/06C08L33/02C08L75/04
Inventor 李永斌
Owner GANSU HUALONG SEMICON MATERIAL TECH CO LTD
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