Self-assembled nano silicon dioxide abrasive material, polishing solution containing abrasive material and application thereof

A nano-silicon dioxide, silicon dioxide technology, applied in polishing compositions containing abrasives, nanotechnology, nanotechnology and other directions, can solve the problems of reducing polishing efficiency, heavy scratches on the wafer surface, and difficulty in uniform dispersion of nanoparticles , to reduce the scratch probability, improve the surface topography, and increase the removal rate.

Active Publication Date: 2021-11-16
ZHEJIANG AUFIRST MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the chemical mechanical polishing effect of hard and brittle materials is still unsatisfactory. The domestic sapphire substrate polishing generally has the following problems: (1) The polishing rate is low; (2) There are heavy scratches on the wafer surface, which needs to be reworked and re-polished
[0004] The commonly used abrasive in the polishing of hard and brittle materials is SiO 2 and Al 2 o 3 , but wherein silicon dioxide abrasive (Mohs hardness is 6-7) because its Mohs hardness is lower than workpiece hardness, polishing efficiency is low, so polishing time often needs several hours, and this has reduced polishing efficiency greatly, and Al 2 o 3 Abrasives (Mohs hardness is about 9) due to their high hardness, nanoparticles are difficult to disperse evenly and are easy to agglomerate, which often cause rough and deep marks on the wafer and need to be reworked

Method used

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  • Self-assembled nano silicon dioxide abrasive material, polishing solution containing abrasive material and application thereof
  • Self-assembled nano silicon dioxide abrasive material, polishing solution containing abrasive material and application thereof
  • Self-assembled nano silicon dioxide abrasive material, polishing solution containing abrasive material and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example 1

[0042] The preparation method of self-assembled nano silica abrasive, the specific method is as follows:

[0043] Pre-preparation: Synthesis of silica nanospheres (SNS).

[0044] Firstly, 0.3g of arginine was dissolved in 200g of water, and then 40g of tetraethyl orthosilicate (TEOS) was added. The two-phase reaction was stirred in a water bath at a speed of 500 rpm, the reaction temperature was 60 ° C, and the reaction was performed for 24 hours to obtain spherical silica abrasives with a particle size range of 50-80 nm;

[0045] Step 1: Synthesis of silica nanosphere (SNS) seed solution.

[0046]Take out 100g of pre-prepared spherical silica, add water (300g), arginine (0.48g) and F127 (PEO-PPO-PEO triblock copolymer, 5.5g) in sequence, and add 40g of TEOS. The reaction was stirred in a water bath at 60° C. for 24 h, and the obtained blue transparent liquid was a silica (SNS) seed solution.

[0047] Step 2: Through further growth of the seeds, seed meal is prepared.

[0...

Embodiment 1

[0051] A polishing liquid based on self-assembled nano silicon dioxide abrasives, in parts by weight, comprising:

[0052] Self-assembled nano-silica (through the pre-preparation in Preparation Example 1, step 1, step 2, the final non-smooth self-assembled nano-silica abrasive prepared): 20 parts;

[0053] Dispersant: 0.1 parts of polymethyl acrylate (molecular weight: 40,000);

[0054] Metal ion scavenger: 0.1 parts of sodium ethylenediamine di-o-phenylacetate (EDDHA-Na);

[0055] Surfactant: 0.5 part of polyoxyethylene alkylamine;

[0056] pH regulator: 1 part of triethanolamine;

[0057] Deionized water: 78.3 parts.

[0058] Preparation method of polishing liquid:

[0059] 1) Weigh 78.3 parts of deionized water according to the formula components;

[0060] 2) Add 20 parts of self-assembled nano-silica abrasives to deionized water, and stir at 150rpm for 10min;

[0061] 3) Add 1 part of triethanolamine to the above 2), and stir at 200rpm for 10min;

[0062] 4) Add 0.1...

Embodiment 2-19、 comparative example 1-5

[0066] Table 1 shows the components and mass contents of the polishing fluids of Examples 2-19 of the present invention and Comparative Examples 1-5.

[0067] The preparation method of polishing liquid is the same as embodiment 1.

[0068] Table 1 embodiment 2-19 and comparative example 1-5

[0069]

[0070]

[0071]

[0072]

[0073] The spherical silica abrasives in Comparative Examples 1-3 are the pre-prepared spherical silica abrasives in Preparation Example 1.

[0074] like figure 1 Shown is the scanning electron microscope picture of the spherical silica abrasive synthesized in the pre-preparation step of Comparative Example 1-3. It can be seen from the figure that the pre-preparation method successfully synthesized spherical silica abrasive with uniform size.

[0075] The above-mentioned embodiments can be prepared according to the specific preparation steps of the above-mentioned polishing liquid.

[0076] The polishing experimental parameters of perform...

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Abstract

The invention discloses a preparation method of self-assembled nano silicon dioxide. The preparation method comprises synthesizing a silicon dioxide seed solution and growing of a silicon dioxide seed, and specifically comprises the steps of: mixing a PEO-PPO-PEO triblock copolymer, a solution containing spherical silicon dioxide and a solution containing a catalyst; adding a solution containing a silicon precursor at 40-60 DEG C to obtain a solution A; and stirring and reacting for 20-30 hours to obtain a silicon dioxide seed solution, heating to boil, dropwise adding a silicic acid solution, and reacting for 1-3 hours. The surface appearance of the self-assembled nano silicon dioxide is improved, so that the particles and a wafer form multi-point contact, and the removal rate can be increased through a friction chemical reaction. The multi-point contact can effectively disperse the load, so that the scratch becomes shallow, and the scratch probability can be reduced. The polishing solution is used for ultra-precise polishing of hard and brittle materials. Through the synergistic effect of a dispersing agent and a metal ion capturing agent which are compounded, the adsorption and dispersion effects of abrasive dust ions or particles are well balanced, and cleaning is easy after polishing.

Description

technical field [0001] The invention relates to a polishing liquid based on self-assembled nano silicon dioxide abrasives, in particular to a self-assembly method of abrasives, and belongs to the technical field of fine chemicals. Background technique [0002] With the development of the LED industry, the chip substrate is gradually developing in the direction of large size and high quality. Among them, sapphire wafer is a common substrate in the current LED industry. Sapphire is a general term for alumina single crystal materials. It has excellent chemical stability, optical transparency and ideal mechanical properties. It is often used as a material for optoelectronic components. As the processing of electronic devices has gradually reached the nanometer or even sub-nanometer level, higher requirements have been put forward for precision grinding and polishing technology. [0003] Chemical mechanical polishing technology is currently one of the key technologies for surfac...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14C09G1/02B24B1/00B82Y30/00B82Y40/00
CPCC09K3/1436C09G1/02B24B1/00B82Y30/00B82Y40/00
Inventor 侯军王凯丽
Owner ZHEJIANG AUFIRST MATERIAL TECH CO LTD
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