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Vertical GaN Schottky diode based on in-situ growth MIS structure and preparation method thereof

A Schottky diode, MIS structure technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as poor interface quality and affect device characteristics, achieve high interface quality, inhibit reverse leakage, The effect of less interface state

Active Publication Date: 2021-10-22
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Few researchers have applied the MIS structure in Schottky diodes. This is because the interface quality obtained by the traditional growth medium method is poor, and more trap states will be introduced, which will affect the device characteristics.

Method used

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  • Vertical GaN Schottky diode based on in-situ growth MIS structure and preparation method thereof
  • Vertical GaN Schottky diode based on in-situ growth MIS structure and preparation method thereof
  • Vertical GaN Schottky diode based on in-situ growth MIS structure and preparation method thereof

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preparation example Construction

[0033] like figure 2 As shown, the present invention also provides a method for preparing the above-mentioned vertical GaN Schottky diode based on the in-situ growth MIS structure, which specifically includes the following steps:

[0034] S1. Provide a substrate, ultrasonically clean the substrate 1 with acetone, absolute ethanol solution, and deionized water, and heat-treat the substrate 1 at 1050°C for 10 minutes in a hydrogen atmosphere, and then use metal organic compound chemical vapor deposition An n+ layer 2 with a thickness of 0.5-5 μm is deposited on the substrate 1 by MOCVD process, and the doping concentration is 10 18 cm -3 ~10 20 cm -3 , the doping element is silicon, wherein the reaction chamber pressure in the MOCVD process is 10-100 Torr, the Ga source flow rate is 50-100 μmol / min, the ammonia gas flow rate is 3000-6000 sccm, the hydrogen gas flow rate is 1000-2000 sccm, and the temperature is 900 °C ;

[0035] S2. On the n+ layer 2, deposit a drift regio...

Embodiment 1

[0040]The vertical GaN Schottky diode based on the in-situ growth MIS structure provided by the embodiment of the present invention includes a substrate 1, the bottom of the substrate 1 is provided with a cathode 4, and the top of the substrate 1 is provided with an n+ layer sequentially from bottom to top 2 and the drift region 3, the top of the drift region 3 is provided with an in-situ grown dielectric layer 5, and the top of the dielectric layer 5 is provided with an anode 6.

[0041] Materials of substrate 1 , n+ layer 2 and drift region 3 are gallium nitride materials, substrate 1 is an n-type GaN substrate, and dielectric layer 5 is made of aluminum nitride.

[0042] The n+ layer 2 has a thickness of 0.5 μm and a doping concentration of 10 18 cm -3 .

[0043] The thicknesses of the drift region 3 and the dielectric layer 5 are 1 μm and 5 nm, respectively.

[0044] Cathode 4 metal adopts Ti / Al / Ni / Au combination, wherein the thickness of Ti metal is 20nm, the thickness...

Embodiment 2

[0053] The vertical GaN Schottky diode based on the in-situ growth MIS structure provided by the embodiment of the present invention includes a substrate 1, the bottom of the substrate 1 is provided with a cathode 4, and the top of the substrate 1 is provided with an n+ layer sequentially from bottom to top 2 and the drift region 3, the top of the drift region 3 is provided with an in-situ grown dielectric layer 5, and the top of the dielectric layer 5 is provided with an anode 6.

[0054] Materials of substrate 1 , n+ layer 2 and drift region 3 are gallium nitride materials, substrate 1 is an n-type GaN substrate, and dielectric layer 5 is made of aluminum nitride.

[0055] The n+ layer 2 has a thickness of 3 μm and a doping concentration of 10 19 cm -3 .

[0056] The thicknesses of the drift region 3 and the dielectric layer 5 are 5 μm and 10 nm, respectively.

[0057] Cathode 4 metal adopts Ti / Al / Ni / Au combination, wherein the thickness of Ti metal is 50nm, the thickness...

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Abstract

The invention discloses a vertical GaN Schottky diode based on an in-situ growth MIS structure, which comprises a substrate and is characterized in that the bottom of the substrate is provided with a cathode, the top of the substrate is sequentially provided with an n + layer and a drift region from bottom to top, the top of the drift region is provided with an in-situ growth dielectric layer, and the top of the dielectric layer is provided with an anode. The invention also provides a preparation method of the diode, and the method comprises the following steps: S1, providing a substrate, carrying out the pretreatment and heat treatment of the substrate, and depositing an n+ layer on the substrate; S2, depositing a drift region with a thickness of 1-10 [mu]m on the n + layer; S3, directly growing a dielectric layer on the GaN drift region in situ; S4, depositing cathode metal at the bottom of the substrate; and S5, manufacturing a mask on the dielectric layer, and depositing anode metal on the dielectric layer to obtain the Schottky diode. The diode provided by the invention is high in interface quality and beneficial to long-term reliability.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, and in particular relates to a vertical GaN Schottky diode with an in-situ growth MIS structure and a preparation method thereof, which can be used in the field of power switches. Background technique [0002] The third-generation wide bandgap semiconductor materials represented by GaN and SiC have attracted wide attention in the field of power switching devices due to their advantages such as wide bandgap width, high critical electric field strength, high electron mobility, and high electron saturation rate. Due to its excellent material properties, GaN-based Schottky barrier diodes (SBDs) have the advantages of low forward voltage drop, fast reverse recovery, high switching frequency, high breakdown voltage, and high power density, and are ideal for power electronics applications. Ideal choice. Compared with lateral Schottky diodes, vertical Schottky diodes have wider conduction channels a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/872H01L21/329H01L29/20
CPCH01L29/0607H01L29/872H01L29/66143H01L29/2003
Inventor 赵胜雷赵杜钧张进成宋秀峰吴银河刘爽李仲扬朱丹郝跃
Owner XIDIAN UNIV
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