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Silicon carbide Schottky diode and preparation method thereof

A technology of Schottky diodes and silicon carbide, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increased Schottky reverse leakage and large reverse leakage of SiCJBS to improve performance Effect

Active Publication Date: 2021-04-27
ZHUZHOU CSR TIMES ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] This application provides a silicon carbide Schottky diode and its preparation method to solve the problem of excessive reverse leakage of SiC JBS, especially when the reverse bias voltage is low, the Schottky reverse leakage increases rapidly with the increase of voltage. big problem

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  • Silicon carbide Schottky diode and preparation method thereof
  • Silicon carbide Schottky diode and preparation method thereof
  • Silicon carbide Schottky diode and preparation method thereof

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Embodiment 1

[0053] Such as Figure 1a As shown, in order to solve the problem of excessive reverse leakage of SiC JBS, especially when the reverse bias voltage is low, the Schottky reverse leakage increases rapidly with the increase of voltage, some embodiments of the present disclosure provide a A silicon carbide Schottky diode 100 includes: a SiC substrate 101 , a drift layer 102 , a barrier layer 103 , a transition layer 104 , a cathode 107 , an anode 108 and a protection layer 109 .

[0054] Exemplarily, the SiC substrate 101 is a SiC substrate of the first conductivity type, and the thickness of the SiC substrate 101 is 350 um to 500 um.

[0055] The drift layer 102 is a drift layer of the first conductivity type, located above the SiC substrate 101 , and the thickness of the drift layer 102 formed by epitaxy is 5 um to 150 um according to the different withstand voltage capability of the SiC JBS.

[0056] The barrier layer 103 is a barrier layer of the second conductivity type, loca...

Embodiment 2

[0066] The present disclosure also provides a method for preparing a silicon carbide Schottky diode, which is to prepare the silicon carbide Schottky diode in Embodiment 1.

[0067] figure 2 It is a schematic flowchart of a method for preparing a silicon carbide Schottky diode shown in an embodiment of the present disclosure. Figure 3-Figure 9 It is a schematic cross-sectional structure formed by related steps of a method for manufacturing a silicon carbide Schottky diode shown in an embodiment of the present disclosure. Below, refer to figure 2 and Figure 3-Figure 9 The detailed steps of an exemplary method of manufacturing a silicon carbide Schottky diode proposed in an embodiment of the present disclosure will be described.

[0068] Such as figure 2 As shown, the silicon carbide Schottky diode preparation method of this embodiment includes the following steps:

[0069] Step S101 : providing a first conductivity type SiC substrate 101 .

[0070] Wherein, the wafer...

Embodiment 3

[0094] On the basis of Embodiment 2, this embodiment provides a method for preparing an N-type silicon carbide Schottky diode, such as figure 2 As shown, the N-type silicon carbide Schottky diode preparation method of the present embodiment includes the following steps:

[0095] Step S101 : providing an N-type SiC substrate 101 .

[0096] Wherein, the wafer thickness of the SiC substrate 101 is 350um to 500um.

[0097] Step S102: if image 3 , forming an N-type drift layer 102 on the N-type SiC substrate 101 .

[0098] Specifically, the N-type drift layer 102 is formed by CVD epitaxy. The N-type drift layer 102 is a uniformly doped SiC layer. Depending on the withstand voltage capability of the SiC JBS, the thickness of the N-type drift layer 102 formed by epitaxy is 5um to 150um. The doping concentration of N-type ions in the N-type drift layer 102 is 1E14cm -3 to 1E17cm -3 ; During the epitaxy process, the temperature of the cavity is 1400°C to 1800°C.

[0099] Step S...

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Abstract

The invention provides a silicon carbide Schottky diode and a preparation method thereof. The diode comprises a first conductive type silicon carbide substrate, a first conductive type drift layer located above the substrate, a second conductive type barrier layer located above the drift layer and a first conductive type transition layer located above the barrier layer, and the transition layer comprises a junction barrier region used for arranging the Schottky diode and junction terminal protection regions located on the two sides of the junction barrier region. The silicon carbide barrier layers with opposite conductive types are formed on the SiC JBS drift layer, so that the problem of excessive SiC JBS reverse electric leakage is solved on the premise of not increasing forward on-resistance, and particularly, the problem that Schottky reverse electric leakage is rapidly increased along with voltage increase when reverse bias voltage is low is solved.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductor devices, in particular to a silicon carbide Schottky diode and a preparation method thereof. Background technique [0002] Schottky Barrier Diode (SBD for short) is not made by using the principle of P-type semiconductor and N-type semiconductor to form a PN junction, but by using the principle of a metal-semiconductor junction formed by metal and semiconductor contact. It is a A hot-carrier diode, which has the advantages of forward voltage drop and short reverse recovery time. Silicon carbide (SiC) has the characteristics of large band gap, high breakdown electric field, high saturation electron drift rate, high thermal conductivity, and stable chemical properties. Silicon carbide Schottky barrier diode (SiC SBD for short), combining the advantages of SiC and SBD, has the characteristics of high turn-off voltage, fast response speed, low switching loss, etc., and has become the S...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L29/06H01L21/329
CPCH01L29/872H01L29/0638H01L29/0646H01L29/6606
Inventor 李诚瞻戴小平吴煜东赵艳黎周正东罗烨辉
Owner ZHUZHOU CSR TIMES ELECTRIC CO LTD
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