Regrowth groove-filling GaN-based junction barrier Schottky diode structure and implementation method

Abstract

The invention discloses a regrowth groove-filling GaN-based junction barrier Schottky diode structure and a manufacturing method, belongs to the technical field of microelectronics, and relates to manufacturing of power electronic devices. The structure comprises a GaN self-supporting substrate, an n <->-GaN drift region, a P type GaN region, a mask dielectric layer, a groove type structure, a regrown n <->-GaN region, cathode metal and anode metal. The method comprises steps of homoepitaxially extending an n-drift region on the GaN self-supporting substrate, forming a mask dielectric layer and a groove-shaped structure on the structure, re-growing n-GaN to partially or completely fill the groove-shaped structure, and depositing anode and cathode metals. According to the invention, an effective PN junction can be formed on the n-GaN drift region, under reverse bias high voltage, the PN junction can effectively adjust electric field distribution, reduce a metal semiconductor interface electric field, inhibit junction electric leakage and improve the breakdown voltage of the device, and the application range of the GaN-based vertical structure Schottky diode is expanded.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to the production of power electronic devices Background technique [0002] In recent years, with the development of material science, GaN substrate materials with high quality and low dislocation density have been gradually commercialized, which facilitates the development of vertical structure devices. GaN substrates obtained by HVPE, sodium fusion and ammonothermal methods Has a very low defect density. [0003] With the maturity of GaN material growth conditions, homoepitaxial GaN materials on low dislocation density GaN substrates have extremely low defect density, and can strictly control the impurity concentration, thereby growing high-resistance GaN epitaxial materials. The advantages of vertical structure devices in the field of power electronics are prominent. They use high-quality GaN bulk materials for conduction, and are less affected by interface states, which c...

AI Technical Summary

Problems solved by technology

However, the existing technology lacks the means to modify GaN materials, and the performance of GaN JBS prepared based on ion implantation method is poor

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