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Vertical aluminum nitride schottky diode based on silicon carbide substrate and its preparation method

A Schottky diode and silicon carbide substrate technology, which is applied in the field of Schottky aluminum nitride diodes, can solve the problems of low breakdown voltage, undeveloped aluminum nitride, and low rated power, so as to improve the breakdown voltage , Inhibit reverse leakage and improve quality

Active Publication Date: 2021-11-30
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, such aluminum nitride lateral devices have not given full play to the material advantages of aluminum nitride, mainly in the following two aspects: first, its rated power is low, and the rated power can only be increased by increasing the device size; second, its shock The breakdown voltage is much lower than the theoretical value of aluminum nitride material

Method used

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  • Vertical aluminum nitride schottky diode based on silicon carbide substrate and its preparation method
  • Vertical aluminum nitride schottky diode based on silicon carbide substrate and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] Example 1, making an aluminum nitride Schottky diode with Ni / Au as the anode metal, titanium as the cathode metal, and magnesium ions as the ion implantation.

[0027] Step 1: Cleaning the epitaxial wafer.

[0028] 1.1) Selection of epitaxial wafers:

[0029] The epitaxial wafer used in this embodiment includes an n-type highly doped silicon carbide substrate and an epitaxial wafer material of an n-type aluminum nitride epitaxial layer from bottom to top, wherein the thickness of the silicon carbide substrate is 400 μm, and the doping concentration is 5×10 18 cm -3 , the thickness of the n-type aluminum nitride epitaxial layer is 500nm, and the doping concentration is 1×10 17 cm -3 .

[0030] 1.2) Pretreatment of the epitaxial wafer:

[0031] Put the above-mentioned epitaxial wafer into acetone, isopropanol, and deionized water for 5 minutes, and then soak the epitaxial wafer in 10% HF solution for 30 s, and finally wash the epitaxial wafer with deionized water an...

Embodiment 2

[0041] Embodiment 2: Fabricate an aluminum nitride Schottky diode in which the anode metal is Ni / Au / Ni, the cathode metal is nickel, and the ion implantation is nitrogen ions.

[0042] Step A: select the epitaxial wafer and clean it.

[0043] A1) Select epitaxial wafer materials including n-type highly doped silicon carbide substrate and n-type aluminum nitride epitaxial layer from bottom to top, wherein the thickness of the silicon carbide substrate is 100 μm, and the doping concentration is 5×10 17 cm -3 , the thickness of the n-type aluminum nitride epitaxial layer is 800nm, and the doping concentration is 1×1015 cm -3 epitaxial wafers;

[0044] A2) Put the above-mentioned epitaxial wafer into acetone, isopropanol, and deionized water for 5 minutes, and then soak the epitaxial wafer in 10% HF solution for 30 seconds. Finally, wash the epitaxial wafer with deionized water and dry it with nitrogen. .

[0045] Step B: deposit cathode metal on the highly doped n-type silico...

Embodiment 3

[0054] Example 3, making an aluminum nitride Schottky diode in which the anode metal is Pt / Au, the cathode metal is Ti / Al, and the ion implantation is fluorine ions.

[0055] Step 1: Select an epitaxial wafer and clean it.

[0056] The epitaxial wafer material including n-type highly doped silicon carbide substrate and n-type aluminum nitride epitaxial layer is selected from bottom to top, wherein the thickness of the silicon carbide substrate is 5000 μm, and the doping concentration is 1×10 20 cm -3 , the thickness of the n-type AlN epitaxial layer is 20 μm, and the doping concentration is 1×10 17 cm -3 ; then put the epitaxial wafer into acetone, isopropanol, and deionized water for 5 minutes for ultrasonic cleaning; then put the epitaxial wafer into 10% HF solution for 30 seconds; finally wash the epitaxial wafer with deionized water and dry it with nitrogen .

[0057] Step 2: Deposit cathode metal on the highly doped n-type silicon carbide substrate, and anneal the cat...

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Abstract

The invention discloses a vertical aluminum nitride schottky diode based on a silicon carbide substrate, which mainly solves the problems of low breakdown voltage and low rated power of the existing horizontal aluminum nitride schottky diode. It includes an ohmic electrode (1), a substrate (2), an aluminum nitride epitaxial layer (3), and a Schottky electrode (4) from bottom to top. Wherein the substrate (2) adopts n-type highly doped silicon carbide, and its doping concentration is 10 17 -10 20 cm ‑3 ; The aluminum nitride epitaxial layer (3) is a single-layer n-type aluminum nitride layer, and its doping concentration is 10 15 -10 17 cm ‑3 , and there are high-resistance regions on both sides that hinder carrier migration. The invention suppresses the reverse leakage and improves the breakdown voltage of the device. It can be used as a high-frequency circuit, an ultra-high-speed switching circuit and a high-voltage power device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a Schottky aluminum nitride diode with a vertical structure, which can be used in high-frequency circuits, ultra-high-speed switching circuits and high-voltage-resistant power devices. Background technique [0002] Aluminum nitride is an ultra-wide bandgap semiconductor material with a bandgap of 6.1eV, compared to GaN with a bandgap of 3.4eV and β-Ga with a bandgap of 4.8eV 2 o 3 , diamond with a width of 5.5eV, these ultra-wide bandgap semiconductor materials, aluminum nitride has obvious material advantages in the bandgap width. In addition, aluminum nitride has high electron mobility, its critical electric field strength is as high as 12MV / cm, and its Ballyga figure of merit can reach 10 4 , indicating that aluminum nitride has great development potential as a semiconductor material in the field of power electronics. At the same time, since the thermal conduc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/872H01L21/329H01L29/20H01L29/06H01L21/02
CPCH01L21/02378H01L21/0254H01L29/0611H01L29/2003H01L29/66143H01L29/872
Inventor 周弘王捷英曾诗凡张进成许晟瑞刘志宏郝跃
Owner XIDIAN UNIV
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