Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Terahertz voltage-controlled oscillator based on multiple oscillation cores

A voltage-controlled oscillator and dual-oscillation technology, used in power oscillators, electrical components, etc., can solve problems such as low power conversion efficiency, and achieve the effects of high-band load capacity, increased Q value, and wide tuning range.

Pending Publication Date: 2021-10-15
SOUTHEAST UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the Push-Push oscillator is easy to oscillate, its power conversion efficiency is too low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Terahertz voltage-controlled oscillator based on multiple oscillation cores
  • Terahertz voltage-controlled oscillator based on multiple oscillation cores
  • Terahertz voltage-controlled oscillator based on multiple oscillation cores

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] like figure 2 As shown, a terahertz voltage controlled oscillator based on a dual oscillation core includes a distributed oscillator with a cross-coupling oscillating unit and a transmission line string, a buffer output stage and a multiplier. The cross-coupled oscillating unit consists of a pair of NMOS tubes and two inductances. The gate of the transistor MN1 of the first cross-coupled oscillating unit passes through the drain of the inductance L4 transistor MN2, the gate of the transistor MN2 passes through the drain of the inductance L3 transistor MN1, the transistor MN1, and the source of transistors Mn2; transistor MN1, The drain of the transistor MN2 is connected by coplanar waveguides L1, L2, and the common waveguides L1, L2, connected to the power supply voltage. The gate of the transistor MN3 of the second cross-coupled oscillating unit passes through the drain of the inductance L8 transistor MN4, the gate of the transistor MN4 passes through the drain of the indu...

Embodiment 2

[0026] like image 3As shown, a terahertz voltage controlled oscillator based on a three-oscillation core includes a distributed oscillator with a three cross-coupling oscillating unit and a transmission line string, a buffer output stage and a multiplier. The cross-coupled oscillating unit consists of a pair of NMOS tubes and two inductances; the gate of the transistor MN1 of the first cross-coupled oscillating unit passes through the drain of the inductance L4 transistor Mn2, the gate of the transistor MN2 passes through the inductance L3 transitionist Mn1. The source grounding of the pole, the transistors MN1, and the transistor Mn2; the drain of the transistors MN1, the transistor MN2 is connected by coplanar waveguides L1, L2, and the common waveguide L1, L2 is connected to the power supply voltage. The gate of the transistor MN3 of the second cross-coupled oscillating unit passes through the drain of the inductance L8 transistor MN4, the gate of the transistor MN4 passes thro...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a terahertz voltage-controlled oscillator based on multiple oscillation cores, which is characterized in that a plurality of oscillation cores are connected in parallel, negative resistance is reduced, transmission connected with each VCO oscillation core is designed according to index requirements of the oscillator, and finally oscillation signals are input into a buffer amplifier circuit and a frequency multiplier circuit. According to the structure, under the condition that the process is limited, the value of a passive device can be effectively reduced, relatively good phase noise is realized, and a high-quality local oscillation signal is provided for a terahertz frequency band transceiving front end.

Description

Technical field [0001] The present invention relates to a millimeters of a millimeters of a millimeter wavelehertz band CMOS multi-core voltage controlled oscillator for achieving an oscillation signal such as a terahertz band. Background technique [0002] Terra-hertz is electromagnetic wave in a frequency range of 0.1 t to 10 THz, which corresponds to between 3 mm and 30 μm, which belongs to nonion radiation. In recent years, Taihaz has attracted attention in object imaging, astronomical probation and ultra-wideband high-speed communication system, and the terahertz signal source is a key part of the terahertz application. Its performance indicators directly affect the performance of the system. The terahertz signal can be indirectly acquired in a multiplier chain, that is, the high quality microwave low frequency signal obtains the required terahertz frequency by multiple multipliers, which has the advantages of higher frequency stability and lower power consumption. In the de...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03B5/12
CPCH03B5/1218H03B5/1228Y02D30/70
Inventor 李芹冯可瞧
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com