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Welding method of tantalum target material assembly

A welding method and tantalum target technology, applied in welding equipment, cold-pressed connection, connecting components, etc., can solve the problems of low welding bonding strength, poor coating performance of target components, and short service life, etc., and improve the welding bonding strength. , The effect of uniform thickness and extended service life

Pending Publication Date: 2021-10-01
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the problems existing in the prior art, the purpose of the present invention is to provide a welding method for tantalum target components. By redesigning the welding process, the welding bonding strength of the target components obtained by the current welding method is low and the service life is short. , the coating performance of target components is poor, etc.

Method used

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  • Welding method of tantalum target material assembly
  • Welding method of tantalum target material assembly

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] This embodiment provides a welding method for a tantalum target assembly, and the welding method includes the following steps:

[0043] (1) Sandblasting is carried out on the welding surface of the tantalum target, and then the welding surface of the tantalum target is treated with tin coating; the sand grains in the sandblasting include 60# white corundum; the sandblasting The pressure is 0.55MPa; the vertical distance between the sandblasting port and the welding surface of the tantalum target in the sandblasting treatment is 90mm; the time of the sandblasting treatment is 2.5min; after the sandblasting treatment, the tantalum target is welded The roughness of the surface is Ra2.5 μm; the thickness of the tin film in the tin plating film treatment is 5.5 μm;

[0044] (2) Copper-plated film treatment is performed on the welding surface of the back plate, and then the tin-plated tantalum target and the copper-plated back plate are heat-treated, and then the mixed metal ...

Embodiment 2

[0048] This embodiment provides a welding method for a tantalum target assembly, and the welding method includes the following steps:

[0049] (1) Sandblasting is carried out on the welding surface of the tantalum target, and then the welding surface of the tantalum target is treated with tin coating; the sand grains in the sandblasting include 60# white corundum; the sandblasting The pressure is 0.5MPa; the vertical distance between the sandblasting port and the welding surface of the tantalum target in the sandblasting treatment is 100mm; the time of the sandblasting treatment is 1min; after the sandblasting treatment, the welding surface of the tantalum target is The roughness is Ra1 μm; the thickness of the tin film in the tin coating treatment is 6 μm;

[0050] (2) Copper-plated film treatment is performed on the welding surface of the back plate, and then the tin-plated tantalum target and the copper-plated back plate are heat-treated, and then the mixed metal powder is ...

Embodiment 3

[0054] This embodiment provides a welding method for a tantalum target assembly, and the welding method includes the following steps:

[0055] (1) Sandblasting is carried out on the welding surface of the tantalum target, and then the welding surface of the tantalum target is treated with tin coating; the sand grains in the sandblasting include 60# white corundum; the sandblasting The pressure is 0.6MPa; the vertical distance between the sandblasting port and the welding surface of the tantalum target in the sandblasting treatment is 80mm; the time of the sandblasting treatment is 4min; after the sandblasting treatment, the welding surface of the tantalum target is The roughness is Ra4μm; the thickness of the tin film in the tin coating treatment is 5μm;

[0056] (2) Copper-plated film treatment is performed on the welding surface of the back plate, and then the tin-plated tantalum target and the copper-plated back plate are heat-treated, and then the mixed metal powder is res...

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Abstract

The invention relates to a welding method of a tantalum target material assembly. The welding method comprises the following steps: carrying out sand blasting treatment on a welding surface of a tantalum target material, and then carrying out tin film plating treatment on the welding surface of the tantalum target material; carrying out copper film plating treatment on a welding surface of a back plate, then carrying out heating treatment on the tantalum target material plated with the tin film and the back plate plated with the copper film, then arranging mixed metal powder on the welding surface of the tantalum target material and the welding surface of the back plate correspondingly, and then carrying out infiltration treatment; and arranging copper wires on the back plate subjected to infiltration treatment, then assembling the welding surface of the back plate provided with the copper wires and the welding surface of the tantalum target material, and carrying out pressurizing and cooling, so that the tantalum target material assembly is obtained. Welding is carried out by adopting a film plating process and combining with specific mixed metal powder, then the welding bonding strength of the tantalum target material assembly is improved, meanwhile, the service life of the welded target material is prolonged by 20-30%, and when the welded target material assembly is sputtered, the thickness of a plated film obtained in the sputtering process is uniform.

Description

technical field [0001] The invention relates to the field of target welding, in particular to a welding method for a tantalum target assembly. Background technique [0002] At present, the tantalum target usually needs to be combined with the back plate for semiconductor sputtering. Brazing welding is a commonly used welding process for target component welding. Compared with diffusion welding, it has the advantages of low cost and high efficiency. At present, the welding method between the tantalum target and the aluminum alloy backplane is usually diffusion welding, and the brazing welding process has the disadvantage of low bonding strength, and lacks a stable brazing process. [0003] For example, CN103572225A discloses a method for manufacturing a tantalum target and a tantalum target assembly. The method for manufacturing a tantalum target includes: providing a tantalum ingot; hot forging the tantalum ingot to form a first tantalum target blank; The first tantalum tar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K1/00B23K1/20F16B11/00
CPCB23K1/0008B23K1/203F16B11/004
Inventor 姚力军边逸军潘杰王学泽廖培君华东瑜
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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