Cell structure of trench gate igbt, its preparation method and trench gate igbt

A trench gate and cell technology, used in electrical components, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problem of increasing the chip area, reduce the conduction voltage drop, improve the conductance modulation effect, and increase the emission The effect of the pole contact area

Active Publication Date: 2022-05-20
GREE ELECTRIC APPLIANCES INC +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above problems, the present disclosure provides a trench gate IGBT cell structure, its preparation method and trench gate IGBT, which solves the problem of increased chip area caused by dummy gates in the prior art

Method used

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  • Cell structure of trench gate igbt, its preparation method and trench gate igbt
  • Cell structure of trench gate igbt, its preparation method and trench gate igbt
  • Cell structure of trench gate igbt, its preparation method and trench gate igbt

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Embodiment 1

[0053] Such as figure 2 and image 3 As shown, the embodiment of the present disclosure provides a trench gate IGBT cell structure 200, including a substrate 201, a drift layer 202, a first trench gate 203, a second trench gate 204, a well region 205, and a source region 206 , the second source region 206 , the interlayer dielectric layer 207 , the first connection hole 208 , the second connection hole 209 , the emitter metal layer 210 , the collector region 211 and the collector metal layer 212 .

[0054] It should be noted that, in order to figure 2 The shapes and positions of the first trench gate 203, the second trench gate 204, the source region 206, the first connection hole 208 and the second connection hole 209 are clearly shown, so figure 2 The substrate 201 , the drift layer 202 , the interlayer dielectric layer 207 , the emitter metal layer 210 , the collector region 211 and the collector metal layer 212 are not shown. but combine image 3 It is possible to u...

Embodiment 2

[0071] On the basis of the first embodiment, this embodiment provides a method for manufacturing a trench gate IGBT cell structure 200 . Figure 4 It is a schematic flowchart of a method for manufacturing a trench gate IGBT cell structure 200 shown in an embodiment of the present disclosure. Figure 5-Figure 15 It is a front plan view and a schematic cross-sectional structure diagram formed in the relevant steps of a method for manufacturing a trench gate IGBT cell structure 200 shown in an embodiment of the present disclosure. in, Figure 6 , Figure 8 and Figure 10 It is a schematic top view of the front formed by the relevant steps of the manufacturing method of the trench gate IGBT cell structure 200 . Below, refer to Figure 4 and Figure 5-Figure 15 The detailed steps of an exemplary method of the method for manufacturing the trench gate IGBT cell structure 200 proposed in the embodiment of the present disclosure will be described.

[0072] Such as Figure 4 As s...

Embodiment 3

[0098] On the basis of the first embodiment, this embodiment provides a trench gate IGBT, including several trench gate IGBT cell structures 200 as described in the first embodiment.

[0099] Figure 16 The blocking voltage curves of a trench gate IGBT and a conventional trench gate IGBT shown for an exemplary embodiment of the present disclosure, as shown in Figure 16 As shown, the two curves basically overlap, indicating that the trench gate IGBT provided by the present disclosure has the same blocking voltage capability as the traditional trench gate IGBT, so the first trench gate 203 and the second trench gate 203 provided by the present disclosure The structure in which the gate 204 is integrated in one cell does not affect the ability of the trench gate IGBT to block voltage.

[0100] Figure 17 It is a saturation voltage curve diagram of a trench gate IGBT and a traditional trench gate IGBT shown in an exemplary embodiment of the present disclosure, as shown in Fig...

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Abstract

The present disclosure provides a cell structure of a trench gate IGBT, a preparation method thereof, and a trench gate IGBT. The cell structure includes a substrate of a first conductivity type; a drift layer of the first conductivity type located above the substrate; a drift layer of the first conductivity type located on the substrate A first trench gate located in the center of the cellular structure within the drift layer and a second trench gate penetrating through the first trench gate; an emitter metal layer located above the drift layer; wherein, the The first trench gate is connected to the emitter metal layer through a first connection hole, and the second trench gate is isolated from the emitter metal layer by an interlayer dielectric layer. Without changing the area of ​​the cell, the problem of increasing the chip area caused by the false gate is solved by integrating the real and false gates in one cell. Not only does it not affect the spacing between the trenches and the conductive channel, but also increases the contact area of ​​the emitter, improves the conductance modulation effect, and reduces the conduction voltage drop while the blocking voltage remains unchanged.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductor devices, in particular to a cell structure of a trench gate IGBT, its preparation method and the trench gate IGBT. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOSFET (metal oxide semiconductor field effect transistor). In addition to the low on-resistance and high withstand voltage characteristics of BJT and MOSFET, it also has many excellent characteristics such as voltage control, large input impedance, low driving power, small on-resistance, and low switching loss. It is widely used in medium and high power Power Electronics Systems. [0003] However, due to the relatively small size of the trench gate IGBT with the traditional structure, the current density is relatively high and the current is concentrated, so it is easy to cause a short...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/423H01L21/331
CPCH01L29/7397H01L29/423H01L29/66348
Inventor 赵浩宇曾丹赵家宽刘勇强史波
Owner GREE ELECTRIC APPLIANCES INC
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