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Epitaxial Growth Method of Single Crystal Diamond Based on Iridium-Graphene Structured Buffer Layer

A single crystal diamond, epitaxial growth technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of thermal expansion mismatch, low single crystal, lattice mismatch, etc., to achieve low stress and low quality. Effect

Active Publication Date: 2022-02-11
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the heteroepitaxial growth of diamond has achieved a lot of results on metal iridium films, the quality of the obtained single crystal diamond is still very low compared with the homoepitaxial single crystal. At present, the main problems are lattice mismatch and thermal expansion mismatch. (ThinSolid Films, 594, 120-128(2015))

Method used

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  • Epitaxial Growth Method of Single Crystal Diamond Based on Iridium-Graphene Structured Buffer Layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] (1) The diamond self-supporting plate has been precision ground and polished to a surface roughness of less than 0.5nm, and it is subjected to pickling pretreatment; (2) Spin-coating photoresist on the diamond, and using photolithography to prepare a set Patterned area, the area of ​​this area accounts for 50% of the total area, and then use the magnetron sputtering method to deposit a metal iridium film to 100nm at a rate of 2nm / min at a temperature of 600°C, and then deposit the photoresist film and the Iridium film peeling; spin-coat photoresist on the patterned iridium / diamond laminated substrate, use photolithography to prepare a photoresist area covering the iridium layer, and use magnetron sputtering on the surface at 200 ° C With the speed deposition of 5nm / min and the thick metallic nickel film of iridium layer; (3) then carry out 10min vacuum annealing to it with 600 ℃; (4) then control the ratio of methane and hydrogen in the process of microwave plasma chemic...

Embodiment 2

[0032] (1) The diamond self-supporting plate has been precision ground and polished to a surface roughness of less than 0.5nm, and it is subjected to pickling pretreatment; (2) Spin-coating photoresist on the diamond, and using photolithography to prepare a set Patterned area, the area of ​​this area accounts for 50% of the total area, and then utilizes the magnetron sputtering method to deposit a metal iridium film to 200nm at a speed of 4nm / min at a temperature of 800°C, and then deposit the photoresist film and the iridium on it Film peeling; Spin-coat photoresist on the patterned iridium / diamond laminated substrate, use photolithography to prepare a photoresist area covering the iridium layer, and use magnetron sputtering method on the surface at 300 ° C to 10nm / min speed deposition and iridium layer equal thickness metal nickel film; (3) followed by vacuum annealing at 600°C for 20min; (4) followed by controlling the ratio of methane to hydrogen in the process of microwave...

Embodiment 3

[0034](1) The diamond self-supporting plate has been precision ground and polished to a surface roughness of less than 0.5nm, and it is subjected to pickling pretreatment; (2) Spin-coating photoresist on the diamond, and using photolithography to prepare a set Patterned area, the area of ​​this area accounts for 60% of the total area, then use the magnetron sputtering method to deposit a metal iridium film to 400nm at a speed of 6nm / min at a temperature of 800°C, and then deposit the photoresist film and the Iridium film peeling; Spin-coat photoresist on the patterned iridium / diamond laminated substrate, use photolithography to prepare the photoresist area covering the iridium layer, and use magnetron sputtering method on the surface at 400 ° C With the speed deposition of 15nm / min and the thick metallic nickel film of iridium layer; (3) then carry out 30min vacuum annealing to it with 800 ℃; (4) the ratio of methane and hydrogen in the microwave plasma chemical vapor depositio...

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Abstract

The invention discloses a single crystal diamond epitaxial growth method based on an iridium-graphene structured buffer layer, and belongs to the field of semiconductor material preparation. It is characterized in that: depositing an iridium film on diamond by magnetron sputtering, then periodically patterning the diamond / iridium laminate substrate, and then depositing a nickel film by magnetron sputtering to fill the non-patterned area Then, the diamond is vacuum annealed, so that the diamond undergoes a phase transition through nickel catalysis, and the carbon formed by the phase transition dissolves in the nickel and forms graphene on its surface. The iridium-graphene composite patterned structure is used to alleviate the lattice mismatch and thermal expansion mismatch between the substrate and the diamond, and then the chemical vapor deposition technology is used to accelerate the nucleation and expansion of the diamond under bias conditions. The epitaxial growth of single crystal diamond was realized under pressure conditions. The method can realize the preparation of large-scale and high-quality self-supporting single crystal diamond.

Description

technical field [0001] The invention relates to the field of semiconductor material preparation, and provides a material preparation basis for further realizing diamond-based semiconductor devices. That is, by preparing a layer of iridium-nickel composite patterned transition layer on the diamond substrate, the diamond undergoes a phase transition under the catalysis of nickel and dissolves in nickel through vacuum annealing. As the annealing time progresses, carbon precipitates on the nickel surface to form graphite alkene. Then, nucleation and growth of diamond are carried out on the surface of the iridium-graphene composite patterned substrate by chemical vapor deposition. [0002] technical background [0003] Due to its excellent mechanical, electrical, thermal, acoustic and optical properties, diamond has broad application prospects in industries such as machining and protection, heat sinks, optical windows, and electronics. However, the quality of single crystal diam...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/04C30B25/18C30B29/04
CPCC30B25/183C30B25/186C30B25/04C30B29/04
Inventor 李成明夏天郑宇亭原晓芦陈良贤刘金龙魏俊俊
Owner UNIV OF SCI & TECH BEIJING
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