Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ga-GaSb nano material and preparation method thereof

A nanomaterial and solution technology, applied in nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve problems such as unfavorable large-scale production development, in-depth GaSb, and limited application.

Active Publication Date: 2021-09-07
UNIV OF SCI & TECH OF CHINA
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003]However, the research on the preparation of GaSb is far less in-depth than other semiconductor materials (such as GaAs, InP, etc.). At present, the preparation of GaSb is often realized through gas phase reactions
However, the gas-phase reaction of GaSb requires high temperature conditions and the participation of catalysts, which is not conducive to the development of large-scale production, and its application is limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ga-GaSb nano material and preparation method thereof
  • Ga-GaSb nano material and preparation method thereof
  • Ga-GaSb nano material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0047] The invention provides a preparation method of Ga-GaSb nanometer material, comprising:

[0048] Trimethylaminogallium dimer and triphenylantimony react in octadecene to form Ga-GaSb nanomaterials.

[0049] The preparation method provided by the invention is a solution-phase synthesis method, with specific organic gallium source-trimethylaminogallium dimer (C 12 h 36 Ga 2 N 6 ) and organic antimony source - triphenyl antimony (Sb(Ph) 3) is used as a precursor to react in a specific reaction medium octadecene, and Ga-GaSb nanomaterials can be synthesized by one-step heating, and the obtained materials have high dispersion and high purity. In the above reaction system, no catalyst is used, and the reaction is promoted by self-catalysis, and the above reaction greatly reduces the reaction temperature and reaction time. That is, the preparation method provided by the present invention greatly reduces the synthesis temperature and time under the premise of ensuring the h...

Embodiment 1

[0081] 1. Sample preparation:

[0082] S1. Add 10 mL of octadecene into a 100 mL three-necked flask for later use.

[0083] S2. Weigh 0.05 mmol (0.0176 g) of triphenyl antimony and 2.0 mL of octadecene into a beaker for ultrasonic dissolution with an ultrasonic power of 190 W for 2 min to obtain a triphenyl antimony solution.

[0084] S3. Transfer the obtained triphenylantimony solution to the above-mentioned three-necked flask filled with octadecene, and perform ultrasonic mixing at a power of 190W for 2 minutes. Afterwards, under the stirring of a high-temperature stirring magnet and in a reaction atmosphere of high-purity argon, the temperature was raised to 110° C. for 40 minutes to remove moisture and low-boiling impurities to obtain a mixed solution.

[0085] S4. While performing step S3, 0.075 mmol (0.0302 g) of trimethylaminogallium dimer was ultrasonically dissolved in 2.0 mL of dried octadecene, the ultrasonic power was 190 W, and the time was 2 min. It is then pla...

Embodiment 2～7

[0100] 1. Sample preparation:

[0101] According to the preparation process of Example 1, the difference is that in step S5, the reaction time is 1 min, 3 min, 5 min, 10 min, 15 min and 30 min respectively.

[0102] 2. Sample test:

[0103] Gained material is carried out transmission electron microscope (TEM) test respectively, the result is respectively as follows Figure 10-16 as shown, Figure 10 It is the TEM figure of the gained Ga-GaSb nanometer material of embodiment 2 reaction 1min, Figure 11 It is the TEM figure of embodiment 3 reaction 3min gained Ga-GaSb nano material, Figure 12 It is the TEM figure of embodiment 4 reaction 5min gained Ga-GaSb nanometer material, Figure 13 It is the TEM figure of embodiment 5 reaction 10min gained Ga-GaSb nano material, Figure 14 It is the TEM figure of embodiment 6 reaction 15min gained Ga-GaSb nano material, Figure 15 It is the TEM picture of the Ga-GaSb nanomaterial obtained by reacting for 30 minutes in Example 7. De...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
lengthaaaaaaaaaa
Login to View More

Abstract

The invention provides a Ga-GaSb nano material and a preparation method of the Ga-GaSb nano material. The preparation method provided by the invention is a solution phase synthesis method, a specific organic gallium source-trimethyl amino gallium dimer (C12H36Ga2N6) and an organic antimony source-triphenyl antimony (Sb(Ph)3) are taken as precursors, a reaction is carried out in a specific reaction medium octadecene, the Ga-GaSb nano material can be synthesized through one-step heating, and the obtained material has high dispersion and high purity. In the reaction system, a catalyst does not need to be used, the reaction is promoted through autocatalysis, and the reaction temperature and the reaction time are greatly reduced. According to the preparation method provided by the invention, on the premise of ensuring the high purity of the Ga-GaSb nano material, the synthesis temperature is greatly reduced, the synthesis time is greatly shortened, the operation is convenient, and the method is simple and easy to implement.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a preparation method of Ga-GaSb nanometer material. Background technique [0002] GaSb is a Ⅲ-Ⅴ group compound semiconductor material, which has high carrier mobility and narrow band gap, so it is considered to be the first choice material for optoelectronic semiconductor devices in the mid-infrared band. Therefore, the production and preparation of GaSb is of great significance. [0003] However, the research on the preparation of GaSb is far less in-depth than that of other semiconductor materials (such as GaAs, InP, etc.). At present, the preparation of GaSb is often realized through gas phase reactions. However, the gas-phase reaction of GaSb requires high temperature conditions and the participation of catalysts, which is not conducive to the development of large-scale production, and its application is limited. Contents of the invention [0004] In view of this, t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01G30/00B22F9/24H01L31/0304B82Y30/00B82Y40/00
CPCC01G30/00B22F9/24H01L31/0304B82Y30/00B82Y40/00C01P2004/80C01P2004/03C01P2004/04C01P2002/85C01P2002/72C01P2002/82C01P2004/30
Inventor 杨晴李焕然
Owner UNIV OF SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com