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A kind of preparation method of semi-insulating indium phosphide

A semi-insulating indium phosphide technology, applied in the field of semi-insulating indium phosphide preparation, can solve the problems of less annealing of indium phosphide and inapplicability of indium phosphide

Active Publication Date: 2022-06-24
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
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Problems solved by technology

[0007] The traditional direct furnace in-situ annealing technology is not suitable for indium phosphide, and currently there are very few technologies for direct furnace annealing of indium phosphide

Method used

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  • A kind of preparation method of semi-insulating indium phosphide
  • A kind of preparation method of semi-insulating indium phosphide
  • A kind of preparation method of semi-insulating indium phosphide

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Embodiment Construction

[0037] The present invention will be further described below with reference to the accompanying drawings.

[0038] see figure 1 , a preparation device for semi-insulating indium phosphide, including a furnace body, a crucible 11 and a heating and support system, a seed rod 3 passing through the furnace body, and a hydrogen pipe 25 and an inert gas pipe 26 on the side of the furnace body. , Exhaust pipe 19; an injector 7 is provided in the furnace body, and the injection lifting rod 6 connecting the injector 7 protrudes out of the furnace body to connect to the drive device (marked in the figure); an in-situ annealing device is also set in the furnace body.

[0039] The heating and support system of the crucible 11 includes a heat preservation jacket 12 , a main heater 15 , a graphite support 16 , a crucible rod 17 , and a lower heater 18 .

[0040] see figure 2 , the lift rod 6 is connected to the injector 7 through the injection lift rod right support 6-1 and the injection...

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Abstract

A method for preparing semi-insulating indium phosphide, which belongs to the field of crystal preparation, is completed by using a preparation device for semi-insulating indium phosphide, and the preparation device includes a closed furnace body and a crucible in the furnace body, including the following steps: step A, heating Indium to form an indium melt; step B, filling the furnace body with 0.02-0.3MPa hydrogen, and keeping the pressure for 1-5 hours; covering the surface of the melt with liquid boron oxide; step C, filling the furnace body with 6-15MPa inert Gas; step D, injecting phosphorus gas into the indium melt; step E, crystal growth; step F, in-situ annealing, and complete the preparation of semi-insulating indium phosphide. Adopting the method proposed by the present invention can complete the growth of the crystal, and realize the in-situ annealing of the crystal in a suitable space, especially when annealing in a phosphorus atmosphere is required, ensure that the phosphorus gas does not condense, maintain the pressure in the annealing space, and establish A good annealing environment ensures the quality of semi-insulating indium phosphide crystals.

Description

technical field [0001] The invention belongs to the field of crystal preparation, in particular to a preparation method of semi-insulating indium phosphide. Background technique [0002] InP material is an important compound semiconductor material, and is one of the preferred materials for the preparation of high-frequency and high-speed devices. It shows great advantages in the frequency band above 100GHz. Irradiation and other characteristics. Semi-insulating indium phosphide substrates are widely used in 5G networks, terahertz communications, millimeter wave communications and detection. Generally, the semi-insulating properties of indium phosphide are achieved by doping iron, but iron will reduce the critical shear stress of the crystal, and there are many defects such as dislocations. [0003] In addition, in terahertz devices, doping elements have a great influence on the dielectric constant of indium phosphide materials. Generally, the higher the doping concentrati...

Claims

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Application Information

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IPC IPC(8): C30B29/40C30B11/12C30B33/02
CPCC30B29/40C30B11/12C30B33/02
Inventor 王书杰孙聂枫徐森锋孙同年刘惠生
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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